參數(shù)資料
型號： Am29LV640DU90RPCEN
廠商： Advanced Micro Devices, Inc.
英文描述： Ceramic Conformally Coated / Radial 'Standard & High Voltage Golden Max'; Capacitance [nom]: 330pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: C0G (NP0); Lead Style: Radial Leaded; Lead Dimensions: 0.100" Lead Spacing; Body Dimensions: 0.150" x 0.210" x 0.130"; Container: Bag; Qty per Container: 500
中文描述： 64兆位（4個M x 16位），3.0伏的CMOS只均勻部門閃光控制記憶與VersatileI
文件頁數(shù)： 41/57頁
文件大?。?/td> 1467K
代理商： AM29LV640DU90RPCEN
40
Am29LV640D/Am29LV641D
September 20, 2002
AC CHARACTERISTICS
Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the
“
Erase And Programming Performance
”
section for more information.
Parameter
Speed Options
JEDEC
Std.
Description
90R
101R
120R,
121R
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
90
100
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ASO
Address Setup Time to OE# low during toggle bit
polling
Min
15
ns
t
WLAX
t
AH
Address Hold Time
Min
45
45
50
ns
t
AHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
45
45
50
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OEPH
Output Enable High during toggle bit polling
Min
20
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
35
35
50
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Word Programming Operation (Note 2)
Typ
11
μs
t
WHWH1
t
WHWH1
Accelerated Word Programming Operation (Note 2)
Typ
7
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.9
sec
t
VHH
V
HH
Rise and Fall Time (Note 1)
Min
250
ns
t
VCS
V
CC
Setup Time (Note 1)
Min
50
μs
t
RB
Write Recovery Time from RY/BY#
Min
0
ns
t
BUSY
Program/Erase Valid to RY/BY# Delay
Min
90
ns
相關(guān)PDF資料
PDF描述
AM29LV640DU90RPCI 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
AM29LV640DU90RWHI 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
Am29LV640DU90RZI 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
AM29LV641D 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
Am29LV641DH101RZIN Timer Display Panel; No. of Digits/Alpha:4; Accuracy: 0.5%; Connector Type:0.25" Q.C.; Display Font Color:Red; Leaded Process Compatible:Yes; Operating Temp. Min:0 C; Output Current:20A; Output Type:Relay; Output Voltage:115VAC RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV640DU-90RWHIT 制造商:Advanced Micro Devices 功能描述:63-BALL FINE-PITCH BALL GRID ARRAY (FBGA) 0.80 MM PITCH, 11 X 12 MM PACKAGE (FBE063)
AM29LV640MB-90REI 制造商:Advanced Micro Devices 功能描述:
AM29LV640MH112REI 制造商:Advanced Micro Devices 功能描述:4M X 16 FLASH 3V PROM, 110 ns, PDSO56
AM29LV640MU101RPCI 制造商:Advanced Micro Devices 功能描述:
AM29LV640MU90NI 制造商:Advanced Micro Devices 功能描述:
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*