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參數(shù)資料
| 型號： | Am29LV640DH101RPCI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| 中文描述： | 64兆位（4個M x 16位），3.0伏的CMOS只均勻部門閃光控制記憶與VersatileI |
| 文件頁數(shù)： | 20/57頁 |
| 文件大?。?/td> | 1467K |
| 代理商： | AM29LV640DH101RPCI |
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September 20, 2002
Am29LV640D/Am29LV641D
19
Write Protect (WP#)
The Write Protect function provides a hardware
method of protecting the first or last sector without
using V
ID
.
If the system asserts V
IL
on the WP# pin, the device
disables program and erase functions in the first or
last sector independently of whether those sectors
were protected or unprotected using the method de-
scribed in
“
Sector Group Protection and Unprotection
”
.
Note that if WP# is at V
IL
when the device is in the
standby mode, the maximum input load current is in-
creased. See the table in
“
DC Characteristics
”
.
If the system asserts V
IH
on the WP# pin, the device
reverts to whether the first or last sector was previ-
ously set to be protected or unprotected using the
method described in
“
Sector Group Protection and Un-
protection
”
.
Temporary Sector Group Unprotect
(
Note:
In this device, a sector group consists of four adjacent
sectors that are protected or unprotected at the same time
(see Table 4)).
This feature allows temporary unprotection of previ-
ously protected sector groups to change data in-sys-
tem. The Sector Group Unprotect mode is activated by
setting the RESET# pin to V
ID
(8.5 V
–
12.5 V). During
this mode, formerly protected sector groups can be
programmed or erased by selecting the sector group
addresses. Once V
ID
is removed from the RESET#
pin, all the previously protected sector groups are
protected again. Figure 1 shows the algorithm, and
Figure 21 shows the timing diagrams, for this feature.
Figure 1.
Temporary Sector Group
Unprotect Operation
START
Perform Erase or
Program Operations
RESET# = V
IH
Temporary Sector
Group Unprotect
Completed (Note 2)
RESET# = V
ID
(Note 1)
Notes:
1. All protected sector groups unprotected (If WP# = V
IL
,
the first or last sector will remain protected).
2. All previously protected sector groups are protected
once again.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Am29LV640DH101RPCIN | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| Am29LV640DH101RWHE | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| Am29LV640DH101RWHEN | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| Am29LV640DH101RWHI | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| Am29LV640DH101RWHIN | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV640DH90REI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 64MBIT 4MX16 90NS 48TSOP - Trays |
| AM29LV640DL90RZI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV640DU-90NI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV640DU90REI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 64MBIT 4MX16 90NS 48TSOP - Trays |
| AM29LV640DU-90RWHIT | 制造商:Advanced Micro Devices 功能描述:63-BALL FINE-PITCH BALL GRID ARRAY (FBGA) 0.80 MM PITCH, 11 X 12 MM PACKAGE (FBE063) |
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