參數(shù)資料
型號(hào): Am29LV400T-90RSEB
廠商: Advanced Micro Devices, Inc.
英文描述: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 4兆位(512畝x 8-Bit/256畝x 16位),3.0伏的CMOS只引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù): 26/40頁(yè)
文件大?。?/td> 516K
代理商: AM29LV400T-90RSEB
Am29LV400
32
PREL I M I N AR Y
AC CHARACTERISTICS
WE#
CE#
OE#
High Z
tOE
High Z
DQ7
DQ0–DQ6
RY/BY#
tBUSY
Complement
True
Addresses
VA
tOEH
tCE
tCH
tOH
tDF
VA
Status Data
Complement
Status Data
True
Valid Data
tACC
tRC
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
20514C-22
Figure 18.
Data# Polling Timings (During Embedded Algorithms)
WE#
CE#
OE#
High Z
tOE
DQ6/DQ2
RY/BY#
tBUSY
Addresses
VA
tOEH
tCE
tCH
tOH
tDF
VA
tACC
tRC
Valid Data
Valid Status
(first read)
(second read)
(stops toggling)
Valid Status
VA
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read
cycle, and array data read cycle.
20514C-23
Figure 19.
Toggle Bit Timings (During Embedded Algorithms)
相關(guān)PDF資料
PDF描述
Am29LV400B-90RSEB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV400BT70RSEB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV400BB70RSEB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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Am29LV010BB-45RJEB ICSM, IS61LV25616AL-10TI M
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