參數(shù)資料
型號: Am29LV400T-120WAEB
廠商: Advanced Micro Devices, Inc.
英文描述: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 4兆位(512畝x 8-Bit/256畝x 16位),3.0伏的CMOS只引導扇區(qū)閃存
文件頁數(shù): 16/40頁
文件大?。?/td> 516K
代理商: AM29LV400T-120WAEB
23
Am29LV400
PR EL IMIN AR Y
DC CHARACTERISTICS
CMOS Compatible
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. Typical VCC is 3.0 V.
2. ICC active while Embedded Erase or Embedded Program is in progress.
3. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns.
4. Not 100% tested.
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
ILI
Input Load Current
VIN = VSS to VCC,
VCC = VCC max
±1.0
A
ILIT
A9 Input Load Current
VCC = VCC max; A9 = 12.5 V
35
A
ILO
Output Leakage Current
VOUT = VSS to VCC,
VCC = VCC max
±1.0
A
ICC1
VCC Active Read Current
(Note 1)
CE# = VIL, OE# = VIH,
Byte Mode
5 MHz
10
16
mA
1 MHz
2
4
CE# = VIL, OE# = VIH,
Word Mode
5 MHz
9
16
1 MHz
2
4
ICC2
VCC Active Write Current
(Notes 2 and 4)
CE# = VIL, OE# = VIH
20
30
mA
ICC3
VCC Standby Current
VCC = VCC max;
CE#, RESET# = VCC±0.3 V
0.2
5
A
ICC4
VCC Reset Current
VCC = VCC max;
RESET# = VSS ± 0.3 V
0.2
5
A
ICC5
Automatic Sleep Mode (Note 3)
VIH = VCC ± 0.3 V;
VIL = VSS ± 0.3 V
0.2
5
A
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
0.7 x VCC
VCC + 0.3
V
VID
Voltage for Autoselect and
Temporary Sector Unprotect
VCC = 3.3 V
11.5
12.5
V
VOL
Output Low Voltage
IOL = 4.0 mA, VCC = VCC min
0.45
V
VOH1
Output High Voltage
IOH = –2.0 mA, VCC = VCC min
0.85 VCC
V
VOH2
IOH = –100 A, VCC = VCC min
VCC–0.4
VLKO
Low VCC Lock-Out Voltage
(Note 4)
2.3
2.5
V
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Am29LV400B-120WAEB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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