參數(shù)資料
型號(hào): Am29LV400B-90RSIB
廠商: Advanced Micro Devices, Inc.
英文描述: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 4兆位(512畝x 8-Bit/256畝x 16位),3.0伏的CMOS只引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù): 34/40頁(yè)
文件大小: 516K
代理商: AM29LV400B-90RSIB
Am29LV400
34
P R E L IM IN A R Y
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
Notes:
1. Not 100% tested.
2.
See the “Erase and Programming Performance” section for more information.
Parameter
-90R
-100
-120
-150
JEDEC
Std.
Description
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
90
100
120
150
ns
t
AVEL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
50
50
50
65
ns
t
DVEH
t
DS
Data Setup Time
Min
50
50
50
65
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
OES
Output Enable Setup Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
50
50
50
65
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
30
30
35
ns
t
WHWH1
t
WHWH1
Programming Operation
(Note 2)
Byte
Typ
9
μ
s
Word
Typ
11
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.7
sec
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