參數(shù)資料
型號(hào): AM29LV400B-120EE
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 512K X 8 FLASH 3V PROM, 120 ns, PDSO48
封裝: TSOP-48
文件頁數(shù): 33/40頁
文件大小: 516K
代理商: AM29LV400B-120EE
33
Am29LV400
P R E L I M I N A R Y
AC CHARACTERISTICS
Enter
Embedded
Erasing
Temporary Sector Unprotect
Note:
Not 100% tested.
Parameter
All Speed Options
JEDEC
Std.
Description
Unit
t
VIDR
V
ID
Rise and Fall Time (See Note)
Min
500
ns
t
RSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
μ
s
Note:
The system may use OE# and CE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an
erase-suspended sector.
20514C-24
Figure 20.
DQ2 vs. DQ6
Erase
Erase
Resume
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
Suspend
Program
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
RESET#
t
VIDR
12 V
0 or 3 V
CE#
WE#
RY/BY#
t
VIDR
t
RSP
Program or Erase Command Sequence
0 or 3 V
20514C-25
Figure 21.
Temporary Sector Unprotect Timing Diagram
相關(guān)PDF資料
PDF描述
AM29LV400B-120EEB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV400T-100SIB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV400B-100WAEB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV400B-90RSIB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV640DH120RWHI 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
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