參數(shù)資料
型號(hào): Am29LV400B-100WAEB
廠商: Advanced Micro Devices, Inc.
英文描述: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 4兆位(512畝x 8-Bit/256畝x 16位),3.0伏的CMOS只引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù): 6/40頁(yè)
文件大?。?/td> 516K
代理商: AM29LV400B-100WAEB
Am29LV400
6
P R E L IM IN A R Y
Special Handling Instructions for Fine
PItch Ball Grid Array (FBGA)
Special handling is required for Flash Memory products
in FBGA packages.
Flash memory devices in FBGA packages may be
damaged if exposed to ultrasonic cleaning methods.
The package and/or data integrity may be
compromised if the package body is exposed to
temperatures above 150
°
C for prolonged periods of
time.
PIN CONFIGURATION
A0–A17
=
18 addresses
DQ0–DQ14 =
15 data inputs/outputs
DQ15/A-1
=
DQ15 (data input/output, word mode),
A-1 (LSB address input, byte mode)
BYTE#
=
Selects 8-bit or 16-bit mode
CE#
=
Chip enable
OE#
= Output enable
WE#
=
Write enable
RESET#
=
Hardware reset pin, active low
RY/BY#
= Ready/Busy# output
V
CC
=
3.0 volt-only single power supply
(see Product Selector Guide for speed
options and voltage supply tolerances)
V
SS
NC
=
Device ground
=
Pin not connected internally
LOGIC SYMBOL
20514C-4
18
16 or 8
DQ0–DQ15
(A-1)
A0–A17
CE#
OE#
WE#
RESET#
BYTE#
RY/BY#
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