參數(shù)資料
型號(hào)： AM29LV320DT90EI
廠商： ADVANCED MICRO DEVICES INC
元件分類： PROM
英文描述： 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
中文描述： 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝： MO-142B, TSOP-48
文件頁(yè)數(shù)： 50/55頁(yè)
文件大?。?/td> 1258K
代理商： AM29LV320DT90EI
50
Am29LV320D
November 15, 2004
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0 V V
CC
, 1,000,000 cycles.
Additionally, programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90
°
C, V
CC
= 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since
most bytes program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before
erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program
command. See
Table 14, on page 29
for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V, one pin at a time.
TSOP AND BGA PACKAGE CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Typ (Note 1) Max (Note 2)
Unit
Comments
Sector Erase Time
0.7
15
sec
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
50
sec
Byte Program Time
9
300
μs
Excludes system level
overhead (Note 5)
Word Program Time
11
360
μs
Accelerated Byte/Word Program Time
7
210
μs
Chip Program Time
(Note 3)
Byte Mode
36
108
sec
Word Mode
24
72
Description
Min
Max
Input voltage with respect to V
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
V
CC
Current
–1.0 V
V
CC
+ 1.0 V
+100 mA
–100 mA
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
TSOP
6
7.5
pF
Fine-pitch BGA
4.2
5.0
pF
C
OUT
Output Capacitance
V
OUT
= 0
TSOP
8.5
12
pF
Fine-pitch BGA
5.4
6.5
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
TSOP
7.5
9
pF
Fine-pitch BGA
3.9
4.7
pF
Parameter Description
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°
C
10
Years
125
°
C
20
Years
相關(guān)PDF資料
PDF描述
AM29LV320MB90RE 16-Bit Buffer/Drivers With 3-State Outputs 48-CFP -55 to 125
AM29LV320MT100E 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
AM29LV320MT100EI 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
AM29LV320MB100PC 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
AM29LV320MB100PCI 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV320DT90WMI 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 90ns 48-Pin FBGA 制造商:Advanced Micro Devices 功能描述:NOR Flash, 2M x 16, 48 Pin, Plastic, BGA
AM29LV320MB100EI 制造商:Advanced Micro Devices 功能描述:
AM29LV320MB90RPCI 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 4MX8/2MX16 90NS 64BGA - Trays
AM29LV320MB90RWCI 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 4MX8/2MX16 90NS 48FBGA - Trays
AM29LV320ML101EI 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 4MX8/2MX16 100NS 56TSOP - Trays
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