- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366502 > Am29LV320DT90EF (Advanced Micro Devices, Inc.) 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | Am29LV320DT90EF |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 32兆位（4個(gè)M × 8位/ 2米x 16位），3.0伏的CMOS只，引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 30/55頁 |
| 文件大?。?/td> | 1258K |
| 代理商： | AM29LV320DT90EF |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁當(dāng)前第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁
30
Am29LV320D
November 15, 2004
WRITE OPERATION STATUS
The device provides several bits to determine
the status of a program or erase operation:
DQ2, DQ3, DQ5, DQ6, and DQ7.
Table 15, on
page 33
and the following subsections describe
the function of these bits. DQ7 and DQ6 each
offer a method for determining whether a pro-
gram or erase operation is complete or in
progress. The device also provides a hard-
ware-based output signal, RY/BY#, to deter-
mine whether an Embedded Program or Erase
operation is in progress or is completed.
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the
host system whether an Embedded Program or
Erase algorithm is in progress or completed, or
whether a device is in Erase Suspend. Data#
Polling is valid after the rising edge of the final
WE# pulse in the command sequence.
During the Embedded Program algorithm, the
device outputs on DQ7 the complement of the
datum programmed to DQ7. This DQ7 status
also applies to programming during Erase Sus-
pend. When the Embedded Program algorithm
is complete, the device outputs the datum pro-
grammed to DQ7. The system must provide the
program address to read valid status informa-
tion on DQ7. If a program address falls within a
protected sector, Data# Polling on DQ7 is active
for approximately 1 μs, then the device returns
to the read mode.
During the Embedded Erase algorithm, Data#
Polling produces a “0” on DQ7. When the Em-
bedded Erase algorithm is complete, or if the
device enters the Erase Suspend mode, Data#
Polling produces a “1” on DQ7. The system
must provide an address within any of the sec-
tors selected for erasure to read valid status in-
formation on DQ7.
After an erase command sequence is written, if
all sectors selected for erasing are protected,
Data# Polling on DQ7 is active for approxi-
mately 100 μs, then the device returns to the
read mode. If not all selected sectors are pro-
tected, the Embedded Erase algorithm erases
the unprotected sectors, and ignores the se-
lected sectors that are protected. However, if
the system reads DQ7 at an address within a
protected sector, the status may not be valid.
Just prior to the completion of an Embedded
Program or Erase operation, DQ7 may change
asynchronously with DQ0–DQ6 while Output
Enable (OE#) is asserted low. That is, the de-
vice may change from providing status infor-
mation to valid data on DQ7. Depending on
when the system samples the DQ7 output, it
may read the status or valid data. Even if the
device completes the program or erase opera-
tion and DQ7 contains valid data, the data out-
puts on DQ0–DQ6 may be still invalid. Valid
data on DQ0–DQ7 appears on successive read
cycles.
Table 15, on page 33
shows the outputs for
Data# Polling on DQ7.
Figure 6, on page 30
shows the Data# Polling algorithm.
Figure 20,
on page 44
in the AC Characteristics section
shows the Data# Polling timing diagram.
Figure 6.
Data# Polling Algorithm
DQ7 = Data
Yes
No
No
DQ5 = 1
No
Yes
Yes
FAIL
PASS
Read DQ7–DQ0
Addr = VA
Read DQ7–DQ0
Addr = VA
DQ7 = Data
START
Notes:
1. VA = Valid address for programming. During a
sector erase operation, a valid address is any
sector address within the sector being erased.
During chip erase, a valid address is any
non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1”
because DQ7 may change simultaneously with
DQ5.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV320DT90EI | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| AM29LV320MB90RE | 16-Bit Buffer/Drivers With 3-State Outputs 48-CFP -55 to 125 |
| AM29LV320MT100E | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV320MT100EI | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV320MB100PC | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV320DT90EI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV320DT90WMI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 90ns 48-Pin FBGA 制造商:Advanced Micro Devices 功能描述:NOR Flash, 2M x 16, 48 Pin, Plastic, BGA |
| AM29LV320MB100EI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV320MB90RPCI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 4MX8/2MX16 90NS 64BGA - Trays |
| AM29LV320MB90RWCI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 4MX8/2MX16 90NS 48FBGA - Trays |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。