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參數(shù)資料
| 型號： | AM29LV320DB90EF |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 32兆位（4個M × 8位/ 2米x 16位），3.0伏的CMOS只，引導扇區(qū)閃存 |
| 文件頁數(shù)： | 52/57頁 |
| 文件大?。?/td> | 636K |
| 代理商： | AM29LV320DB90EF |
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50
Am29LV320D
December 14, 2005
D A T A S H E E T
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0 V V
CC
, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90
°
C, V
CC
= 2.7 V,
1,000,000 cycles.
3. The typical chip programming time is considerably less than
the maximum chip programming time listed, since most
bytes program faster than the maximum program times
listed.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
4. In the pre-programming step of the Embedded Erase
algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the
two- or four-bus-cycle sequence for the program command.
See Table 14 on page 29 for further information on
command definitions.
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V, one pin at a time.
TSOP AND BGA PACKAGE CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.7
15
sec
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
50
sec
Byte Program Time
9
300
μs
Excludes system level
overhead (Note 5)
Word Program Time
11
360
μs
Accelerated Byte/Word Program Time
7
210
μs
Chip Program Time
(Note 3)
Byte Mode
36
108
sec
Word Mode
24
72
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
V
CC
Current
–1.0 V
V
CC
+ 1.0 V
+100 mA
–100 mA
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
TSOP
6
7.5
pF
Fine-pitch BGA
4.2
5.0
pF
C
OUT
Output Capacitance
V
OUT
= 0
TSOP
8.5
12
pF
Fine-pitch BGA
5.4
6.5
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
TSOP
7.5
9
pF
Fine-pitch BGA
3.9
4.7
pF
Parameter Description
Test Conditions
150
°
C
Min
Unit
Minimum Pattern Data Retention Time
10
Years
125
°
C
20
Years
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|---|---|
| AM29LV320DB90REC | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| AM29LV320DB90RED | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| AM29LV320DB90REF | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV320DB90EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 90ns 48-Pin TSOP |
| AM29LV320DB-90EI | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 2M x 16, 48 Pin, Plastic, TSSOP |
| AM29LV320DB-90EI ES | 制造商:Advanced Micro Devices 功能描述:IC,EEPROM,NOR FLASH,2MX16/4MX8,CMOS,TSSOP,48PIN,PLASTIC |
| AM29LV320DB90EI/T | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 90ns 48-Pin TSOP T/R |
| AM29LV320DB-90WMF | 制造商:Spansion 功能描述:2M X 16 FLASH 3V PROM, 90 ns, PBGA48 |
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