參數(shù)資料
型號: AM29LV256ML103REF
廠商: Advanced Micro Devices, Inc.
英文描述: 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
中文描述: 256兆位(16 M中的x 16-Bit/32 M中的x 8位)MirrorBitTM 3.0伏特,只有統(tǒng)一閃存部門與VersatileI /價外控制
文件頁數(shù): 34/69頁
文件大?。?/td> 546K
代理商: AM29LV256ML103REF
32
Am29LV256M
December 16, 2005
D A T A S H E E T
Table 9.
Primary Vendor-Specific Extended Query
COMMAND DEFINITIONS
Writing specific address and data commands or se-
quences into the command register initiates device op-
erations. Tables
11
and
12
define the valid register
command sequences.
Writing incorrect address and
data values or writing them in the improper sequence
may place the device in an unknown state.
A reset
command is then required to return the device to read-
ing array data.
All addresses are latched on the falling edge of WE#
or CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the
AC Characteristics
section for timing
diagrams.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is ready to read array data
after completing an Embedded Program or Embedded
Erase algorithm.
After the device accepts an Erase Suspend command,
the device enters the erase-suspend-read mode, after
which the system can read data from any
Addresses (x16)
Data
Description
40h
41h
42h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
0031h
Major version number, ASCII
44h
0033h
Minor version number, ASCII
45h
0008h
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
Process Technology (Bits 7-2) 0010b = 0.23 μm MirrorBit
46h
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
0001h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
0004h
Sector Protect/Unprotect scheme
04 = 29LV800 mode
4Ah
0000h
Simultaneous Operation
00 = Not Supported, X = Number of Sectors in Bank
4Bh
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
0001h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
4Dh
00B5h
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
4Eh
00C5h
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
4Fh
0004h/
0005h
Top/Bottom Boot Sector Flag
00h = Uniform Device without WP# protect, 02h = Bottom Boot Device, 03h = Top
Boot Device, 04h = Uniform sectors bottom WP# protect, 05h = Uniform sectors top
WP# protect
50h
0001h
Program Suspend
00h = Not Supported, 01h = Supported
相關(guān)PDF資料
PDF描述
AM29LV256ML103REI 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256ML103RFF 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256ML103RFI 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256ML103RPGF 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256ML103RPGI 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
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