參數(shù)資料
型號(hào)： AM29LV256MH30EF
廠商： Advanced Micro Devices, Inc.
英文描述： 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
中文描述： 256兆位（16 M中的x 16-Bit/32 M中的x 8位）MirrorBitTM 3.0伏特，只有統(tǒng)一閃存部門與VersatileI /價(jià)外控制
文件頁數(shù)： 5/69頁
文件大?。?/td> 546K
代理商： AM29LV256MH30EF
December 16, 2005
Am29LV256M
3
D A T A S H E E T
TABLE OF CONTENTS
Product Selector Guide. . . . . . . . . . . . . . . . . . . . . 4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . 5
Pin Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Ordering Information. . . . . . . . . . . . . . . . . . . . . . . 8
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 9
Table 1. Device Bus Operations....................................................... 9
Word/Byte Configuration ..........................................................9
VersatileIO
TM
(V
IO
) Control ........................................................9
Requirements for Reading Array Data ...................................10
Page Mode Read ............................................................................10
Writing Commands/Command Sequences ............................10
Write Buffer .....................................................................................10
Accelerated Program Operation ......................................................10
Autoselect Functions .......................................................................10
Standby Mode ........................................................................10
Automatic Sleep Mode ...........................................................11
RESET#: Hardware Reset Pin ...............................................11
Output Disable Mode ..............................................................11
Table 2. Sector Address Table........................................................ 12
Autoselect Mode .....................................................................23
Table 3. Autoselect Codes, (High Voltage Method) ....................... 23
Sector Group Protection and Unprotection .............................24
Table 4. Sector Group Protection/Unprotection AddressTable ..... 24
Write Protect (WP#) ................................................................26
Temporary Sector Group Unprotect .......................................26
Figure 1. Temporary Sector GroupUnprotectOperation ................26
Figure 2. In-System Sector Group Protect/UnprotectAlgorithms ...27
SecSi (Secured Silicon) Sector Flash MemoryRegion ..........28
Table 5. SecSi Sector Contents...................................................... 28
................................................................................................29
Figure 3. SecSi Sector Protect Verify ..............................................29
Hardware Data Protection ......................................................29
Low VCC Write Inhibit .....................................................................29
Write Pulse “Glitch” Protection ........................................................29
Logical Inhibit ..................................................................................29
Power-Up Write Inhibit ....................................................................29
Common Flash Memory Interface (CFI). . . . . . . 29
Table 6. CFI Query Identification String ..........................................30
Table 7. System Interface String..................................................... 30
Table 8. Device Geometry Definition ..............................................31
Table 9. Primary Vendor-Specific Extended Query ........................32
Command Definitions . . . . . . . . . . . . . . . . . . . . . 32
Reading Array Data ................................................................32
Reset Command .....................................................................33
Autoselect Command Sequence ............................................33
Enter SecSi Sector/Exit SecSi Sector CommandSequence ..33
Word/Byte Program Command Sequence .............................33
Unlock Bypass Command Sequence ..............................................34
Write Buffer Programming ...............................................................34
Accelerated Program ......................................................................35
Figure 4. Write Buffer Programming Operation ...............................36
Figure 5. Program Operation ..........................................................37
Program Suspend/Program Resume Command Sequence ...37
Figure 6. Program Suspend/Program Resume ...............................38
Chip Erase Command Sequence ...........................................38
Sector Erase Command Sequence ........................................38
Table 10. Erase Operation............................................................. 39
Erase Suspend/Erase Resume Commands ...........................39
Command Definitions .............................................................40
Table 11. Command Definitions (x16 Mode, BYTE# = V
IH
)........... 40
Table 12. Command Definitions (x8 Mode, BYTE# = V
IL
).............. 41
Write Operation Status. . . . . . . . . . . . . . . . . . . . . 42
DQ7: Data# Polling .................................................................42
Figure 7. Data# Polling Algorithm ..................................................42
RY/BY#: Ready/Busy# ............................................................43
DQ6: Toggle Bit I ....................................................................43
Figure 8. Toggle Bit Algorithm ........................................................44
DQ2: Toggle Bit II ...................................................................44
Reading Toggle Bits DQ6/DQ2 ...............................................44
DQ5: Exceeded Timing Limits ................................................45
DQ3: Sector Erase Timer .......................................................45
DQ1: Write-to-Buffer Abort .....................................................45
Table 13. Write Operation Status................................................... 45
Absolute Maximum Ratings. . . . . . . . . . . . . . . . . 46
Figure 9. Maximum Negative OvershootWaveform .....................46
Figure 10. Maximum Positive OvershootWaveform .....................46
Operating Ranges. . . . . . . . . . . . . . . . . . . . . . . . . 46
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 47
Test Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Figure 11. Test Setup .....................................................................48
Table 14. Test Specifications......................................................... 48
Key to Switching Waveforms. . . . . . . . . . . . . . . . 48
Figure 12. Input Waveforms and
Measurement Levels ......................................................................48
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 49
Read-Only Operations ...........................................................49
Figure 13. Read Operation Timings ...............................................49
Figure 14. Page Read Timings ......................................................50
Hardware Reset (RESET#) ....................................................51
Figure 15. Reset Timings ...............................................................51
Erase and Program Operations ..............................................52
Figure 16. Program Operation Timings ..........................................53
Figure 17. Accelerated Program Timing Diagram ..........................53
Figure 18. Chip/Sector Erase Operation Timings ..........................54
Figure 19. Data# Polling Timings (During Embedded Algorithms) .55
Figure 20. Toggle Bit Timings (During Embedded Algorithms) ......56
Figure 21. DQ2 vs. DQ6 .................................................................56
Temporary Sector Unprotect ..................................................57
Figure 22. Temporary Sector Group Unprotect TimingDiagram ...57
Figure 23. Sector Group Protect and Unprotect TimingDiagram ..58
Alternate CE# Controlled Erase and ProgramOperations .....59
Figure 24. Alternate CE# Controlled Write (Erase/Program)
OperationTimings ..........................................................................60
Latchup Characteristics. . . . . . . . . . . . . . . . . . . . 60
Erase And Programming Performance. . . . . . . . 61
TSOP Pin and BGA Package Capacitance . . . . . 61
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 63
TS056/TSR056—56-Pin Standard/Reverse Thin Small Outline
Package (TSOP) .....................................................................63
LAC064—64-Ball Fortified Ball Grid Array
18 x 12 mm Package ..............................................................64
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 65
相關(guān)PDF資料
PDF描述
AM29LV256MH30EI 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256MH30FF 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256ML103FF 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256ML103FI 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256ML103PGF 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV256MH94REI 制造商:Spansion 功能描述:256M (32MX8/16MX16) 3V REG, MIRRORBIT, TSOP56, IND - Trays
AM29LV320DB120EI 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin TSOP
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AM29LV320DB90EC 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 90ns 48-Pin TSOP
AM29LV320DB90ED 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 90ns 48-Pin TSOP
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