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參數(shù)資料
| 型號(hào)： | AM29LV256MH113EI |
| 廠(chǎng)商： | ADVANCED MICRO DEVICES INC |
| 元件分類(lèi)： | PROM |
| 英文描述： | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
| 中文描述： | 16M X 16 FLASH 3V PROM, 110 ns, PDSO56 |
| 封裝： | MO-142B, TSOP-56 |
| 文件頁(yè)數(shù)： | 12/69頁(yè) |
| 文件大小： | 546K |
| 代理商： | AM29LV256MH113EI |
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10
Am29LV256M
December 16, 2005
D A T A S H E E T
For example, a V
I/O
of 1.65–3.6 volts allows for I/O at
the 1.8 or 3 volt levels, driving and receiving signals to
and from other 1.8 or 3 V devices on the same data
bus.
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the CE# and OE# pins to V
IL
. CE# is the power
control and selects the device. OE# is the output con-
trol and gates array data to the output pins. WE#
should remain at V
IH
.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory
content occurs during the power transition. No com-
mand is necessary in this mode to obtain array data.
Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid
data on the device data outputs. The device remains
enabled for read access until the command register
contents are altered.
See
“Reading Array Data”
for more information. Refer
to the AC
Read-Only Operations
table for timing speci-
fications and to
Figure 13
for the timing diagram. Refer
to the DC Characteristics table for the active current
specification on reading array data.
Page Mode Read
The device is capable of fast page mode read and is
compatible with the page mode Mask ROM read oper-
ation. This mode provides faster read access speed
for random locations within a page. The page size of
the device is 4 words/8 bytes. The appropriate page is
selected by the higher address bits A(max)–A2. Ad-
dress bits A1–A0 in word mode (A1–A-1 in byte mode)
determine the specific word within a page. This is an
asynchronous operation; the microprocessor supplies
the specific word location.
The random or initial page access is equal to t
ACC
or
t
CE
and subsequent page read accesses (as long as
the locations specified by the microprocessor falls
within that page) is equivalent to t
PACC
. When CE# is
deasserted and reasserted for a subsequent access,
the access time is t
ACC
or t
CE
. Fast page mode ac-
cesses are obtained by keeping the “read-page ad-
dresses” constant and changing the “intra-read page”
addresses.
Writing Commands/Command Sequences
To write a command or command sequence (which in-
cludes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to V
IL
, and OE# to V
IH
.
The device features an
Unlock Bypass
mode to facili-
tate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are re-
quired to program a word, instead of four. The
“Word/Byte Program Command Sequence”
section
has details on programming data to the device using
both standard and Unlock Bypass command se-
quences.
An erase operation can erase one sector, multiple sec-
tors, or the entire device.
Table 2
indicates the address
space that each sector occupies.
Refer to the DC Characteristics table for the active
current specification for the write mode. The
AC Char-
acteristics
section contains timing specification tables
and timing diagrams for write operations.
Write Buffer
Write Buffer Programming allows the system write to a
maximum of 16 words/32 bytes in one programming
operation. This results in faster effective programming
time than the standard programming algorithms. See
“Write Buffer”
for more information.
Accelerated Program Operation
The device offers accelerated program operations
through the ACC function. This is one of two functions
provided by the WP#/ACC pin. This function is prima-
rily intended to allow faster manufacturing throughput
at the factory.
If the system asserts V
HH
on this pin, the device auto-
matically enters the aforementioned Unlock Bypass
mode, temporarily unprotects any protected sector
groups, and uses the higher voltage on the pin to re-
duce the time required for program operations. The
system would use a two-cycle program command se-
quence as required by the Unlock Bypass mode. Re-
moving V
HH
from the WP#/ACC pin returns the device
to normal operation.
Note that the WP#/ACC pin must
not be at V
HH
for operations other than accelerated
programming, or device damage may result. WP# has
an internal pullup; when unconnected, WP# is at V
IH
.
Autoselect Functions
If the system writes the autoselect command se-
quence, the device enters the autoselect mode. The
system can then read autoselect codes from the inter-
nal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in
this mode. Refer to the
Autoselect Mode
and
Autose-
lect Command Sequence
sections for more informa-
tion.
Standby Mode
When the system is not reading or writing to the de-
vice, it can place the device in the standby mode. In
this mode, current consumption is greatly reduced,
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| AM29LV256MH113FF | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
| AM29LV256MH113FI | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
| AM29LV256MH113PGF | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
| AM29LV256MH113PGI | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
| AM29LV256MH113REF | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
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