參數(shù)資料
型號(hào)： AM29LV256MH110EI
廠商： Advanced Micro Devices, Inc.
英文描述： 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
中文描述： 256兆位（16 M中的x 16-Bit/32 M中的x 8位）MirrorBitTM 3.0伏特，只有統(tǒng)一閃存部門與VersatileI /價(jià)外控制
文件頁數(shù)： 49/69頁
文件大?。?/td> 546K
代理商： AM29LV256MH110EI
December 16, 2005
Am29LV256M
47
D A T A S H E E T
DC CHARACTERISTICS
CMOS Compatible
Notes:
1.
On the WP#/ACC pin only, the maximum input load current when
WP# = V
IL
is ± 5.0 μA.
The I
CC
current listed is typically less than 2 mA/MHz, with OE# at
V
IH
.
Maximum I
CC
specifications are tested with V
CC
= V
CC
max.
I
active while Embedded Erase or Embedded Program is in
progress.
2.
3.
4.
5.
Automatic sleep mode enables the low power mode when
addresses remain stable for t
ACC
+ 30 ns.
If V
< V
, maximum V
for CE# and DQ I/Os is 0.3 V
IO
.
Maximum V
IH
for these connections is V
IO
+ 0.3 V
V
CC
voltage requirements.
V
IO
voltage requirements.
Not 100% tested
6.
7.
8.
9.
10. Includes RY/BY#
Parameter
Symbol
Parameter Description
(Notes)
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current (1)
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC
max
±1.0
μA
I
LIT
A9, ACC Input Load Current
V
CC
= V
CC max
; A9 = 12.5 V
35
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
,
V
CC
= V
CC max
±1.0
μA
I
LR
Reset Leakage Current
V
CC
= V
CC max
; RESET# = 12.5 V
35
μA
I
CC1
V
CC
Active Read Current
(2, 3)
CE# = V
IL,
OE# = V
IH
,
1 MHz
3
34
mA
5 MHz
13
43
I
CC2
V
CC
Initial Page Read Current (2, 3)
CE# = V
IL,
OE# = V
IH
1 MHz
4
50
mA
10 MHz
40
80
I
CC3
V
CC
Intra-Page Read Current (2, 3)
CE# = V
IL,
OE# = V
IH
10 MHz
3
20
mA
33 MHz
6
40
I
CC4
V
CC
Active Write Current (3, 4)
CE# = V
IL,
OE# = V
IH
50
60
mA
I
CC5
V
CC
Standby Current (3)
CE#, RESET# = V
CC
± 0.3 V, WP# = V
IH
1
5
μA
I
CC6
V
CC
Reset Current (3)
RESET# = V
SS
± 0.3 V, WP# = V
IH
1
5
μA
I
CC7
Automatic Sleep Mode (3, 5)
V
IH
= V
CC
± 0.3 V; V
IL
= V
SS
± 0.3 V,
WP# = V
IH
1
5
μA
V
IL1
Input Low Voltage 1(6, 7)
–0.5
0.8
V
V
IH1
Input High Voltage 1 (6, 7)
1.9
V
CC
+ 0.5
V
V
IL2
Input Low Voltage 2 (6, 8)
–0.5
0.3 x V
IO
V
V
IH2
Input High Voltage 2 (6, 8)
1.9
V
IO
+ 0.5
V
V
HH
Voltage for ACC Program Acceleration
V
CC
= 2.7 –3.6 V
11.5
12.5
V
V
ID
Voltage for Autoselect and Temporary
Sector Unprotect
V
CC
= 2.7 –3.6 V
11.5
12.5
V
V
OL
Output Low Voltage (10)
I
OL
= 4.0 mA, V
CC
= V
CC min
= V
IO
0.15 x V
IO
V
V
OH1
Output High Voltage
I
OH
= –2.0 mA, V
CC
= V
CC min
= V
IO
0.85 V
IO
V
V
OH2
I
OH
= –100 μA, V
CC
= V
CC min
= V
IO
V
IO
–0.4
V
V
LKO
Low V
CC
Lock-Out Voltage (9)
2.3
2.5
V
相關(guān)PDF資料
PDF描述
AM29LV256MH110FF 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256MH110FI 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256MH110PGF 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256MH110PGI 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256MH113EF 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV256MH120RPGI 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 256MBIT 32MX8/16MX16 120NS 64BGA - Trays
AM29LV256MH123RPGI 制造商:Advanced Micro Devices 功能描述:
AM29LV256MH94REI 制造商:Spansion 功能描述:256M (32MX8/16MX16) 3V REG, MIRRORBIT, TSOP56, IND - Trays
AM29LV320DB120EI 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin TSOP
AM29LV320DB120WMI 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin FBGA
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*