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| 型號(hào)： | AM29LV256MH103RPGI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
| 中文描述： | 16M X 16 FLASH 3V PROM, 100 ns, PBGA64 |
| 封裝： | 18 X 12 MM, 1 MM PITCH, FORTIFIED, BGA-64 |
| 文件頁(yè)數(shù)： | 69/69頁(yè) |
| 文件大小： | 546K |
| 代理商： | AM29LV256MH103RPGI |
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December 16, 2005
Am29LV256M
67
D A T A S H E E T
Revision C+1 (May 28, 2003)
Global
Converted to full datasheet version.
Modified SecSi Sector Flash Memory Region section
to include ESN references.
Erase and Programming Performance
Input values into table that were previously TBD.
Modified notes.
CMOS Compatible
Corrected typos in table.
Erase and Program Operations and Alternate CE#
Controlled Erase and Program Operations
Changed the typical for the Accelerated Effective Write
Buffer Program Operation for Byte and Word to 6.25
and 12.5.
Revision C+2 (June 11, 2003)
Global
Modified speed grades available.
Revision C+3 (September 15, 2003)
Ordering Information
Added OPN note for ESN feature.
Tables 11 & 12 Command Definitions
Changed definition BA to XXX for Program/Erase Sus-
pend (Note 16) and for Program/Erase Resume (Note
17).
Program Suspend/Program Resume Command
Sequence
Removed - program suspended sector is required
when writing this command.
AC Characteristics - Hardware Reset
Added information for
t
RB.
AC Characteristics - Erase and Program
Operations
Added information for
t
BUSY
.
Revision C + 4 (February 9, 2004)
Table 1
Device Bus Operations
Modified ACC column to replace instances of X to L/H.
Customer Lockable: SecSi Sector NOT
Programmed or Protected at the Factory
Removed second paragraph.
Enter SecSi Sector/Exit SecSi Sector Command
Sequence
Added (write buffer) to last sentence of first paragraph.
Write Buffer Programming
Removed last paragraph.
Table 10
&
Table 12
: Command Definitions
Replaced the Addr information Program/Erase Sus-
pend and Program/Erase Resume from BA to XXX.
Erase Suspend/Erase Resume Commands
Added note on flash device performance during
suspend/erase mode
.
AC Characteristics - Erase and Program
Operations
Added t
POLL
information.
AC Characteristics - Operation Timings Figures
Updated
Figure 16
: Program Operation Timings,
Figure 19
: Data# Polling Timings (During Embedded
Algorithms, and
Figure 24
: Alternate CE# Controlled
Write (Erase/Program) Operation Timings.
Trademarks
Updated information.
Cover page and Title sheet
Added notation referencing superseding documenta-
tion.
Revision C + 5 (October 27, 2004)
Ordering Information Table
Added Pb-free ordering option
Revision C + 6 (December 16, 2005)
This product has been retired and is not available for
designs. For new and current designs, S29GL256N
supersedes Am29LV256M and is the factory-recom-
mended migration path. Please refer to the
S29GL256N datasheet for specifications and ordering
information. Availability of this document is retained for
reference and historical purposes only.
Trademarks
Copyright 2005 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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| AM29LV256MH110EF | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
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