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參數(shù)資料
| 型號(hào)： | AM29LV2562M |
| 廠商： | Spansion Inc. |
| 英文描述： | 512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| 中文描述： | 512兆位（16 M中的x 32-Bit/32 M中的x 16位）的MirrorBit 3.0伏特，只有統(tǒng)一閃存部門(mén)與VersatileI / O控制 |
| 文件頁(yè)數(shù)： | 58/69頁(yè) |
| 文件大?。?/td> | 1451K |
| 代理商： | AM29LV2562M |
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56
Am29LV2562M
October 9, 2003
P R E L I M I N A R Y
AC CHARACTERISTICS
OE#
CE#
Addresses
V
CC
WE#
Data
2AAh
SA
t
AH
t
WP
t
WC
t
AS
t
WPH
555h for chip erase
10 for Chip Erase
30h
t
DS
t
VCS
t
CS
t
DH
55h
t
CH
In
Progress
Complete
t
WHWH2
VA
VA
Erase Command Sequence (last two cycles)
Read Status Data
RY/BY#
t
RB
t
BUSY
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”).
2. These waveforms are for the doubleword mode.
Figure 18.
Chip/Sector Erase Operation Timings
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| AM29LV2562MH120RPII | 512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
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| Am29PDL128G70 | 128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIO Control |
| Am29PDL128G70R | 128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIO Control |
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