參數(shù)資料
型號(hào)： AM29LV200BT-70FI
英文描述： x8/x16 Flash EEPROM
中文描述： x8/x16閃存EEPROM
文件頁(yè)數(shù)： 14/35頁(yè)
文件大?。?/td> 744K
代理商： AM29LV200BT-70FI
14
Am29LV040B
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
valid operation. See “Autoselect Command Sequence”
for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase operation. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the
device has resumed erasing.
Notes:
1. See Table 4 for erase command sequence.
2.
See “DQ3: Sector Erase Timer” for more information.
Figure 2.
Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
相關(guān)PDF資料
PDF描述
AM29LV200BT-70SC Nonvolatile CMOS Static RAM, 256 bit, SOIC
AM29LV200BT-70SI x8/x16 Flash EEPROM
AM29LV200BT70WAC EEPROM|FLASH|128KX16/256KX8|CMOS|BGA|48PIN|PLASTIC
AM29LV200BT70WAE EEPROM|FLASH|128KX16/256KX8|CMOS|BGA|48PIN|PLASTIC
AM29LV200BT70WAI EEPROM|FLASH|128KX16/256KX8|CMOS|BGA|48PIN|PLASTIC
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