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    參數(shù)資料
    型號: AM29LV200BB30DTE1
    廠商: Advanced Micro Devices, Inc.
    英文描述: 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1
    中文描述: 2兆位(256畝x 8-Bit/128畝x 16位),3.0伏的CMOS只,引導(dǎo)扇區(qū)快閃記憶體,修編模具1
    文件頁數(shù): 5/11頁
    文件大?。?/td> 200K
    代理商: AM29LV200BB30DTE1
    November 18, 2003
    Am29LV200B Known Good Die
    5
    S U P P L E M E N T
    PAD DESCRIPTION (RELATIVE TO V
    CC
    )
    Note:
    The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.
    Pad
    Signal
    Pad Center (mils)
    X
    0.00
    –12.10
    –18.00
    –23.90
    –29.80
    –35.60
    –41.50
    –47.40
    –53.30
    –62.70
    –62.70
    –62.70
    –62.40
    –55.00
    –49.60
    –43.80
    –38.40
    –32.50
    –27.10
    –21.20
    –15.70
    –6.20
    11.10
    N/A
    28.90
    34.30
    40.20
    45.60
    51.40
    56.80
    64.20
    64.50
    64.50
    64.50
    55.10
    47.50
    41.60
    35.80
    29.80
    24.00
    18.10
    12.30
    6.30
    Pad Center (millimeters)
    X
    0.00
    –0.31
    –0.46
    –0.61
    –0.76
    –0.90
    –1.05
    –1.20
    –1.35
    –1.59
    –1.59
    –1.59
    –1.58
    –1.40
    –1.26
    –1.11
    –0.98
    –0.83
    –0.69
    –0.54
    –0.40
    –0.16
    0.28
    N/A
    0.73
    0.87
    1.02
    1.16
    1.31
    1.44
    1.63
    1.64
    1.64
    1.64
    1.40
    1.21
    1.06
    0.91
    0.76
    0.61
    0.46
    0.31
    0.16
    Y
    Y
    1
    2
    3
    4
    5
    6
    7
    8
    9
    10
    11
    12
    13
    14
    15
    16
    17
    18
    19
    20
    21
    22
    23
    24
    25
    26
    27
    28
    29
    30
    31
    32
    33
    34
    35
    36
    37
    38
    39
    40
    41
    42
    43
    V
    CC
    DQ4
    DQ12
    DQ5
    DQ13
    DQ6
    DQ14
    DQ7
    DQ15/A–1
    V
    SS
    BYTE#
    A16
    A15
    A14
    A13
    A12
    A11
    A10
    A9
    A8
    WE#
    RESET#
    RY/BY#
    Not Connected
    A7
    A6
    A5
    A4
    A3
    A2
    A1
    A0
    CE#
    V
    SS
    OE#
    DQ0
    DQ8
    DQ1
    DQ9
    DQ2
    DQ10
    DQ3
    DQ11
    0.00
    0.00
    0.00
    0.00
    0.00
    0.00
    0.00
    0.00
    0.00
    –1.50
    –11.60
    –21.70
    –112.50
    –112.50
    –112.50
    –112.50
    –112.50
    –112.50
    –112.30
    –112.50
    –112.50
    –116.30
    –116.30
    N/A
    –112.50
    –112.50
    –112.50
    –112.50
    –112.50
    –112.50
    –112.50
    –21.90
    –11.80
    –1.70
    0.90
    0.00
    0.00
    0.00
    0.00
    0.00
    0.00
    0.00
    0.00
    0.00
    0.00
    0.00
    0.00
    0.00
    0.00
    0.00
    0.00
    0.00
    –0.04
    –0.29
    –0.55
    –2.86
    –2.86
    –2.86
    –2.86
    –2.86
    –2.86
    –2.85
    –2.86
    –2.86
    –2.95
    –2.95
    N/A
    –2.86
    –2.86
    –2.86
    –2.86
    –2.86
    –2.86
    –2.86
    –0.56
    –0.30
    –0.04
    0.02
    0.00
    0.00
    0.00
    0.00
    0.00
    0.00
    0.00
    0.00
    相關(guān)PDF資料
    PDF描述
    AM29LV200BB30DTI1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1
    AM29LV200BB30DWC1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1
    AM29LV200BB30DWE1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1
    AM29LV200BB30DWI1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1
    AM29LV200BB35DFC1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1
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