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        • 您現(xiàn)在的位置:買賣IC網(wǎng) > PDF目錄366489 > AM29LV200B-120EC (ADVANCED MICRO DEVICES INC) 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory PDF資料下載
        參數(shù)資料
        型號: AM29LV200B-120EC
        廠商: ADVANCED MICRO DEVICES INC
        元件分類: PROM
        英文描述: 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
        中文描述: 256K X 8 FLASH 3V PROM, 120 ns, PDSO48
        封裝: TSOP-48
        文件頁數(shù): 17/37頁
        文件大小: 478K
        代理商: AM29LV200B-120EC
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        17
        Am29LV200
        P R E L I M I N A R Y
        RY/BY#: Ready/Busy#
        The RY/BY# is a dedicated, open-drain output pin that
        indicates whether an Embedded Algorithm is in
        progress or complete. The RY/BY# status is valid after
        the rising edge of the final WE# pulse in the command
        sequence. Since RY/BY# is an open-drain output, sev-
        eral RY/BY# pins can be tied together in parallel with a
        pull-up resistor to V
        CC
        .
        If the output is low (Busy), the device is actively erasing
        or programming. (This includes programming in the
        Erase Suspend mode.) If the output is high (Ready),
        the device is ready to read array data (including during
        the Erase Suspend mode), or is in the standby mode.
        Table 6 shows the outputs for RY/BY#. Figures 12, 13,
        16 and 17 shows RY/BY# for read, reset, program, and
        erase operations, respectively.
        DQ6: Toggle Bit I
        Toggle Bit I on DQ6 indicates whether an Embedded
        Program or Erase algorithm is in progress or complete,
        or whether the device has entered the Erase Suspend
        mode. Toggle Bit I may be read at any address, and is
        valid after the rising edge of the final WE# pulse in the
        command sequence (prior to the program or erase op-
        eration), and during the sector erase time-out.
        During an Embedded Program or Erase algorithm op-
        eration, successive read cycles to any address cause
        DQ6 to toggle. (The system may use either OE# or
        CE# to control the read cycles.) When the operation is
        complete, DQ6 stops toggling.
        After an erase command sequence is written, if all sec-
        tors selected for erasing are protected, DQ6 toggles for
        approximately 100 μs, then returns to reading array
        data. If not all selected sectors are protected, the Em-
        bedded Erase algorithm erases the unprotected sec-
        tors, and ignores the selected sectors that are
        protected.
        The system can use DQ6 and DQ2 together to deter-
        mine whether a sector is actively erasing or is erase-
        suspended. When the device is actively erasing (that
        is, the Embedded Erase algorithm is in progress), DQ6
        toggles. When the device enters the Erase Suspend
        mode, DQ6 stops toggling. However, the system must
        also use DQ2 to determine which sectors are erasing
        or erase-suspended. Alternatively, the system can use
        DQ7 (see the subsection on “DQ7: Data# Polling”).
        If a program address falls within a protected sector,
        DQ6 toggles for approximately 1 μs after the program
        command sequence is written, then returns to reading
        array data.
        DQ6 also toggles during the erase-suspend-program
        mode, and stops toggling once the Embedded Pro-
        gram algorithm is complete.
        Table 6 shows the outputs for Toggle Bit I on DQ6.
        Refer to Figure 5 for the toggle bit algorithm and to Fig-
        ure 19 in the “AC Characteristics” section for the toggle
        bit timing diagrams. Figure 20 shows the differences
        between DQ2 and DQ6 in graphical form. See also the
        subsection on “DQ2: Toggle Bit II”.
        DQ2: Toggle Bit II
        The “Toggle Bit II” on DQ2, when used with DQ6, indi-
        cates whether a particular sector is actively erasing
        (that is, the Embedded Erase algorithm is in progress),
        or whether that sector is erase-suspended. Toggle Bit
        II is valid after the rising edge of the final WE# pulse in
        the command sequence.
        DQ2 toggles when the system reads at addresses
        within those sectors that have been selected for eras-
        ure. (The system may use either OE# or CE# to control
        the read cycles.) But DQ2 cannot distinguish whether
        the sector is actively erasing or is erase-suspended.
        DQ6, by comparison, indicates whether the device is
        actively erasing, or is in Erase Suspend, but cannot
        distinguish which sectors are selected for erasure.
        Thus, both status bits are required for sector and mode
        information. Refer to Table 6 to compare outputs for
        DQ2 and DQ6.
        Figure 5 shows the toggle bit algorithm in flowchart
        form, and the section “DQ2: Toggle Bit II” explains the
        algorithm. See also the “DQ6: Toggle Bit I” subsection.
        Refer to Figure 19 shows the toggle bit timing diagram.
        Figure 20 shows the differences between DQ2 and
        DQ6 in graphical form.
        Reading Toggle Bits DQ6/DQ2
        Refer to Figure 5 for the following discussion. When-
        ever the system initially begins reading toggle bit sta-
        tus, it must read DQ7–DQ0 at least twice in a row to
        determine whether a toggle bit is toggling. Typically, the
        system would note and store the value of the toggle bit
        after the first read. After the second read, the system
        would compare the new value of the toggle bit with the
        first. If the toggle bit is not toggling, the device has com-
        pleted the program or erase operation. The system can
        read array data on DQ7–DQ0 on the following read cy-
        cle.
        However, if after the initial two read cycles, the system
        determines that the toggle bit is still toggling, the sys-
        tem also should note whether the value of DQ5 is high
        (see the section on DQ5). If it is, the system should
        then determine again whether the toggle bit is toggling,
        since the toggle bit may have stopped toggling just as
        DQ5 went high. If the toggle bit is no longer toggling,
        the device has successfully completed the program or
        erase operation. If it is still toggling, the device did not
        completed the operation successfully, and the system
        must write the reset command to return to reading
        array data.
        相關(guān)PDF資料
        PDF描述
        Am29LV200B-120ECB 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
        AM29LV200B-120EE 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
        AM29LV200B-120EEB 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
        AM29LV200B-120EI 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
        Am29LV200B-120EIB 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
        相關(guān)代理商/技術(shù)參數(shù)
        參數(shù)描述
        AM29LV200BB-120EC 制造商:Advanced Micro Devices 功能描述:128K X 16 FLASH 3V PROM, 120 ns, PDSO48
        AM29LV200BB-90EC 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 16, 48 Pin, Plastic, TSSOP
        AM29LV200BB-90FC 制造商:Advanced Micro Devices 功能描述:2 Mb (128K x 16) Boot Sector, Flash Memory
        AM29LV256MH120RPGI 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 256MBIT 32MX8/16MX16 120NS 64BGA - Trays
        AM29LV256MH123RPGI 制造商:Advanced Micro Devices 功能描述:
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