- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366488 > AM29LV160MB70RFI (ADVANCED MICRO DEVICES INC) 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory PDF資料下載
參數(shù)資料
| 型號： | AM29LV160MB70RFI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 1M X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| 封裝： | REVERSE, MO-142B, TSOP-48 |
| 文件頁數(shù)： | 55/63頁 |
| 文件大小： | 967K |
| 代理商： | AM29LV160MB70RFI |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁當(dāng)前第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁
January31,2007 25974B5
Am29LV160M
53
D a t a S h e e t
Erase and Programming Performance
Notes:
1.
Typical program and erase times assume the following conditions: 25
°
C, V
CC
= 3.0V, 100,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
Under worst case conditions of 90°C, V
CC
= 2.7 V, 100,000 cycles.
The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 10, on page 31
and
Table 11, on page 32
for further information on command definitions.
The device has a minimum erase and program cycle endurance of 100,000 cycles.
2.
3.
4.
5.
6.
Latchup Characteristics
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V, one pin at a time.
TSOP Pin and BGA Package Capacitance
Notes:
1.
2.
Sampled, not 100% tested.
Test conditions T
A
= 25°C, f = 1.0 MHz.
Data Retention
Parameter
Typ ( Note 1)
Max ( Note 2)
Unit
Comments
Sector Erase Time
0.7
15
sec
Excludes 00h programming prior to
erasure (Note 4)
Chip Erase Time
32
Byte Programming Time
18
300
μs
Excludes system level overhead
(Note 5)
Word Programming Time
18
300
Chip Programming Time
(Note 3)
Byte Mode
36
100
sec
Word Mode
19
66
Description
Min
Max
Input voltage with respect to V
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+ 100 mA
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
TSOP
6
7.5
pF
Fine-pitch BGA
4.2
5.0
pF
C
OUT
Output Capacitance
V
OUT
= 0
TSOP
8.5
12
pF
Fine-pitch BGA
5.4
6.5
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
TSOP
7.5
9
pF
Fine-pitch BGA
3.9
4.7
pF
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°
C
10
Years
125
°
C
20
Years
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV160MB70RPCI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MB70RWAI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MB85EI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MB85FI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MB85PCI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV160MB90EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 90ns 48-Pin TSOP |
| AM29LV160MB90WAI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 90ns 48-Pin FBGA |
| AM29LV160MT110EI | 制造商:Spansion 功能描述:16M (2MX8/1MX16) 3V, MIRRORBIT, TOP, TSOP48, IND - Trays |
| AM29LV160MT70EI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 70NS 48TSOP - Trays |
| AM29LV200BB-120EC | 制造商:Advanced Micro Devices 功能描述:128K X 16 FLASH 3V PROM, 120 ns, PDSO48 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。