參數(shù)資料
型號(hào): Am29LV160DT-120SC
廠商: Advanced Micro Devices, Inc.
元件分類(lèi): FLASH
英文描述: 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 16Mb(2M×8位/1Mx16位), 3V, CMOS引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù): 23/49頁(yè)
文件大小: 758K
代理商: AM29LV160DT-120SC
Am29LV160D
23
valid operation. See “Autoselect Command Sequence”
for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase operation. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the de-
vice has resumed erasing.
Notes:
1. See Table 9 for erase command sequence.
2.
See “DQ3: Sector Erase Timer” for more information.
Figure 4.
Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
相關(guān)PDF資料
PDF描述
AM29LV160DT-120SE 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV160DT-120SI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160DT-120WCE 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV160DT-120WCI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV160DT-70EC 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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