參數(shù)資料
型號: AM29LV160DB-90EF
廠商: Advanced Micro Devices, Inc.
元件分類: FLASH
英文描述: 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 16Mb(2M×8位/1Mx16位), 3V, CMOS引導(dǎo)扇區(qū)閃存
文件頁數(shù): 25/52頁
文件大小: 844K
代理商: AM29LV160DB-90EF
22358B7
May 5, 2006
Am29LV160D
23
D A T A S H E E T
valid operation. See “Autoselect Command Sequence”
for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase sus-
pend mode and continue the sector erase operation.
Further writes of the Resume command are ignored.
Another Erase Suspend command can be written after
the device has resumed erasing.
Notes:
1. See Table 9 for erase command sequence.
2. See “DQ3: Sector Erase Timer” for more information.
Figure 4. Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
相關(guān)PDF資料
PDF描述
AM29LV160DB-90EI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160DB-90FC 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160DB-90FI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160DB-90SC 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160DB-90SD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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