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參數(shù)資料
| 型號： | AM29LV160DB-120FC |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | Time-Delay Relay; Contacts:NO; Time Range:1 sec. to 1024 sec.; Timing Function:Delay-On-Make; Leaded Process Compatible:Yes; Supply Voltage Max:288V; Supply Voltage Min:19V; Time Range Max:1024s; Time Range Min:1s RoHS Compliant: Yes |
| 中文描述： | 1M X 16 FLASH 3V PROM, 120 ns, PDSO48 |
| 封裝： | REVERSE, MO-142DD, TSOP-48 |
| 文件頁數(shù)： | 9/50頁 |
| 文件大?。?/td> | 1191K |
| 代理商： | AM29LV160DB-120FC |
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Am29LV160D
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combi-
nation) is formed by a combination of the elements below.
Valid Combinations
Valid Combinations list configurations planned to be sup-
ported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
Am29LV160D
T
-70
E
C
TEMPERATURE RANGE
C
=
Commercial (0°C to +70°C)
I
=
Industrial (–40
°
C to +85
°
C)
E
=
Extended (–55
°
C to +125
°
C)
PACKAGE TYPE
E
=
F
=
S
=
WC
=
48-Pin Thin Small Outline Package (TSOP) Standard Pinout (TS 048)
48-Pin Thin Small Outline Package (TSOP) Reverse Pinout (TSR048)
44-Pin Small Outline Package (SO 044)
48-ball Fine-Pitch Ball Grid Array (FBGA)
0.80 mm pitch, 8 x 9 mm package (FBC048)
SPEED OPTION
See Product Selector Guide and Valid Combinations
BOOT CODE SECTOR ARCHITECTURE
T
=
Top sector
B
=
Bottom sector
DEVICE NUMBER/DESCRIPTION
Am29LV160D
16 Megabit (2M x 8-Bit/1M x 16-Bit) CMOS Flash Memory
3.0 Volt-only Read, Program, and Erase
Valid Combinations For TSOP and SO Packages
Am29LV160DT-70,
Am29LV160DB-70
EC, EI, EE,
FC, FI, FE,
SC, SI, SE
Am29LV160DT-90,
Am29LV160DB-90
Am29LV160DT-120,
Am29LV160DB-120
Valid Combinations for FBGA Packages
Order Number
Package Marking
Am29LV160DT-70,
Am29LV160DB-70
WCC,
WCI,
WCE
L160DT70V,
L160DB70V
C, I, E
Am29LV160DT-90,
Am29LV160DB-90
L160DT90V,
L160DB90V
Am29LV160DT-120,
Am29LV160DB-120
L160DT12V,
L160DB12V
相關PDF資料 |
PDF描述 |
|---|---|
| AM29LV160DB-120EC | INTERVAL/SINGLE SHOT TIMER |
| AM29LV160DB-70WCC | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160DB-90WCC | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160DB-120SE | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160DT-120EE | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 1000pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R (BX); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: M Failure Rate |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV160DB120WCCT | 制造商:Advanced Micro Devices 功能描述: |
| am29lv160db120wcis | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV160DB70EC | 制造商:FLASH29LV160 功能描述:AM29LV160DB-70EC |
| AM29LV160DB-70EC | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 70ns 48-Pin TSOP 制造商:FLASH29LV160 功能描述:AM29LV160DB-70EC 制造商:Advanced Micro Devices 功能描述: |
| AM29LV160DB-70EC\T | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 70ns 48-Pin TSOP T/R |
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