參數(shù)資料
型號(hào): Am29LV160BT80RSI
廠商: Advanced Micro Devices, Inc.
元件分類: FLASH
英文描述: 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 16Mb(2M×8位/1Mx16位), 3V, CMOS引導(dǎo)扇區(qū)閃存
文件頁數(shù): 37/46頁
文件大小: 649K
代理商: AM29LV160BT80RSI
P R E L IM IN A R Y
Am29LV160B
37
AC CHARACTERISTICS
WE#
CE#
OE#
High Z
t
OE
High Z
DQ7
DQ0–DQ6
RY/BY#
t
BUSY
Complement
True
Addresses
VA
t
OEH
t
CE
t
CH
t
OH
t
DF
VA
VA
Status Data
Complement
Status Data
True
Valid Data
Valid Data
t
ACC
t
RC
Note:
VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
21358F-23
Figure 19.
Data# Polling Timings (During Embedded Algorithms)
WE#
CE#
OE#
High Z
t
OE
DQ6/DQ2
RY/BY#
t
BUSY
Addresses
VA
t
OEH
t
CE
t
CH
t
OH
t
DF
VA
VA
t
ACC
t
RC
Valid Data
Valid Status
(stops toggling)
Valid Status
(first read)
(second read)
Valid Status
VA
Note:
VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read
cycle, and array data read cycle.
21358F-24
Figure 20.
Toggle Bit Timings (During Embedded Algorithms)
相關(guān)PDF資料
PDF描述
AM29LV160B 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV160BT80REE Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 680pF; Working Voltage (Vdc)[max]: 2000V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 1825; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.177" x 0.252"; Container: Bulk; Features: High Voltage; Unmarked
Am29LV160BT80REI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160BB-80REC 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160BB80REC 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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