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參數(shù)資料

型號(hào)：	AM29LV160BB80SE
廠商：	ADVANCED MICRO DEVICES INC
元件分類：	PROM
英文描述：	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述：	2M X 8 FLASH 3V PROM, 80 ns, PDSO44
封裝：	SOP-44
文件頁(yè)數(shù)：	26/48頁(yè)
文件大小：	695K
代理商：	AM29LV160BB80SE

Am29LV160B

RY/BY#: Ready/Busy#

The RY/BY# is a dedicated, open-drain output pin that

indicates whether an Embedded Algorithm is in

progress or complete. The RY/BY# status is valid after

the rising edge of the final WE# pulse in the command

sequence. Since RY/BY# is an open-drain output,

several RY/BY# pins can be tied together in parallel

with a pull-up resistor to V

. (The RY/BY# pin is not

available on the 44-pin SO package.)

If the output is low (Busy), the device is actively erasing

or programming. (This includes programming in the

Erase Suspend mode.) If the output is high (Ready),

the device is ready to read array data (including during

the Erase Suspend mode), or is in the standby mode.

Table 10 shows the outputs for RY/BY#. Figures 13, 14,

17 and 18 shows RY/BY# for read, reset, program, and

erase operations, respectively.

DQ6: Toggle Bit I

Toggle Bit I on DQ6 indicates whether an Embedded

Program or Erase algorithm is in progress or complete,

or whether the device has entered the Erase Suspend

mode. Toggle Bit I may be read at any address, and is

valid after the rising edge of the final WE# pulse in the

command sequence (prior to the program or erase

operation), and during the sector erase time-out.

During an Embedded Program or Erase algorithm

operation, successive read cycles to any address

cause DQ6 to toggle. (The system may use either OE#

or CE# to control the read cycles.) When the operation

is complete, DQ6 stops toggling.

After an erase command sequence is written, if all

sectors selected for erasing are protected, DQ6 toggles

for approximately 100 μs, then returns to reading array

data. If not all selected sectors are protected, the

Embedded Erase algorithm erases the unprotected

sectors, and ignores the selected sectors that are pro-

tected.

The system can use DQ6 and DQ2 together to deter-

mine whether a sector is actively erasing or is erase-

suspended. When the device is actively erasing (that is,

the Embedded Erase algorithm is in progress), DQ6

toggles. When the device enters the Erase Suspend

mode, DQ6 stops toggling. However, the system must

also use DQ2 to determine which sectors are erasing

or erase-suspended. Alternatively, the system can use

DQ7 (see the subsection on “DQ7: Data# Polling”).

If a program address falls within a protected sector,

DQ6 toggles for approximately 1 μs after the program

command sequence is written, then returns to reading

array data.

DQ6 also toggles during the erase-suspend-program

mode, and stops toggling once the Embedded

Program algorithm is complete.

Table 10 shows the outputs for Toggle Bit I on DQ6.

Figure 6 shows the toggle bit algorithm in flowchart

form, and the section “Reading Toggle Bits DQ6/DQ2”

explains the algorithm. Figure 20 in the “AC Character-

istics” section shows the toggle bit timing diagrams.

Figure 21 shows the differences between DQ2 and

DQ6 in graphical form. See also the subsection on

“DQ2: Toggle Bit II”.

DQ2: Toggle Bit II

The “Toggle Bit II” on DQ2, when used with DQ6, indi-

cates whether a particular sector is actively erasing

(that is, the Embedded Erase algorithm is in progress),

or whether that sector is erase-suspended. Toggle Bit

II is valid after the rising edge of the final WE# pulse in

the command sequence.

DQ2 toggles when the system reads at addresses

within those sectors that have been selected for era-

sure. (The system may use either OE# or CE# to

control the read cycles.) But DQ2 cannot distinguish

whether the sector is actively erasing or is erase-sus-

pended. DQ6, by comparison, indicates whether the

device is actively erasing, or is in Erase Suspend, but

cannot distinguish which sectors are selected for era-

sure. Thus, both status bits are required for sector and

mode information. Refer to Table 10 to compare

outputs for DQ2 and DQ6.

Figure 6 shows the toggle bit algorithm in flowchart

form, and the section “Reading Toggle Bits DQ6/DQ2”

explains the algorithm. See also the DQ6: Toggle Bit I

subsection. Figure 20 shows the toggle bit timing dia-

gram. Figure 21 shows the differences between DQ2

and DQ6 in graphical form.

Reading Toggle Bits DQ6/DQ2

Refer to Figure 6 for the following discussion. When-

ever the system initially begins reading toggle bit sta-

tus, it must read DQ7–DQ0 at least twice in a row to

determine whether a toggle bit is toggling. Typically,

the system would note and store the value of the tog-

gle bit after the first read. After the second read, the

system would compare the new value of the toggle bit

with the first. If the toggle bit is not toggling, the device

has completed the program or erase operation. The

system can read array data on DQ7–DQ0 on the fol-

lowing read cycle.

However, if after the initial two read cycles, the system

determines that the toggle bit is still toggling, the

system also should note whether the value of DQ5 is

high (see the section on DQ5). If it is, the system

should then determine again whether the toggle bit is

toggling, since the toggle bit may have stopped tog-

gling just as DQ5 went high. If the toggle bit is no longer

toggling, the device has successfully completed the

program or erase operation. If it is still toggling, the

device did not complete the operation successfully, and

相關(guān)PDF資料	PDF描述
AM29LV160BB80SI	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160BB80WCE	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160BB80WCI	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160BB90EC	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160BB90EE	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

相關(guān)代理商/技術(shù)參數(shù)	參數(shù)描述
AM29LV160BT-120EI	制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 90ns 48-Pin TSOP Tray
AM29LV160BT80SC	制造商:AMD 功能描述:*
AM29LV160BT-90EC	制造商:Advanced Micro Devices 功能描述:NOR Flash, 1M x 16, 48 Pin, Plastic, TSSOP
AM29LV160BT-90FC	制造商:Advanced Micro Devices 功能描述: 制造商:Advanced Micro Devices 功能描述:1M X 16 FLASH 3V PROM, 90 ns, PDSO48
AM29LV160DB120EI	制造商:Advanced Micro Devices 功能描述:

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