參數(shù)資料
型號(hào): Am29LV160BB80RWCI
廠商: Advanced Micro Devices, Inc.
元件分類: FLASH
英文描述: 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 16Mb(2M×8位/1Mx16位), 3V, CMOS引導(dǎo)扇區(qū)閃存
文件頁數(shù): 37/46頁
文件大?。?/td> 649K
代理商: AM29LV160BB80RWCI
P R E L IM IN A R Y
Am29LV160B
37
AC CHARACTERISTICS
WE#
CE#
OE#
High Z
t
OE
High Z
DQ7
DQ0–DQ6
RY/BY#
t
BUSY
Complement
True
Addresses
VA
t
OEH
t
CE
t
CH
t
OH
t
DF
VA
VA
Status Data
Complement
Status Data
True
Valid Data
Valid Data
t
ACC
t
RC
Note:
VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
21358F-23
Figure 19.
Data# Polling Timings (During Embedded Algorithms)
WE#
CE#
OE#
High Z
t
OE
DQ6/DQ2
RY/BY#
t
BUSY
Addresses
VA
t
OEH
t
CE
t
CH
t
OH
t
DF
VA
VA
t
ACC
t
RC
Valid Data
Valid Status
(stops toggling)
Valid Status
(first read)
(second read)
Valid Status
VA
Note:
VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read
cycle, and array data read cycle.
21358F-24
Figure 20.
Toggle Bit Timings (During Embedded Algorithms)
相關(guān)PDF資料
PDF描述
Am29LV160BB80RSIB 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV160BB80RSEB 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV160BB80REEB 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160DB-120EI Time-Delay Relay; Time Range:1 sec. to 480 sec.; Timing Function:Delay-On-Make; Leaded Process Compatible:Yes; Supply Voltage Max:288V; Supply Voltage Min:19V; Time Range Max:480s; Time Range Min:3s RoHS Compliant: Yes
AM29LV160DB-120FC Time-Delay Relay; Contacts:NO; Time Range:1 sec. to 1024 sec.; Timing Function:Delay-On-Make; Leaded Process Compatible:Yes; Supply Voltage Max:288V; Supply Voltage Min:19V; Time Range Max:1024s; Time Range Min:1s RoHS Compliant: Yes
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