參數(shù)資料
型號(hào)： Am29LV160BB80RSIB
廠商： Advanced Micro Devices, Inc.
元件分類： FLASH
英文描述： 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述： 16Mb(2M×8位/1Mx16位), 3V, CMOS引導(dǎo)扇區(qū)閃存
文件頁數(shù)： 42/46頁
文件大小： 649K
代理商： AM29LV160BB80RSIB
P R E L I M I N A R Y
42
Am29LV160B
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0 V V
CC
, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2.
Under worst case conditions of 90°C, V
CC
= 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 9 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V one pin at a time.
TSOP AND SO PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.7
15
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
25
s
Byte Programming Time
9
300
μs
Excludes system level
overhead (Note 5)
Word Programming Time
11
360
μs
Chip Programming Time
(Note 3)
Byte Mode
18
54
s
Word Mode
12
36
s
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°
C
10
Years
125
°
C
20
Years
相關(guān)PDF資料
PDF描述
Am29LV160BB80RSEB 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV160BB80REEB 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160DB-120EI Time-Delay Relay; Time Range:1 sec. to 480 sec.; Timing Function:Delay-On-Make; Leaded Process Compatible:Yes; Supply Voltage Max:288V; Supply Voltage Min:19V; Time Range Max:480s; Time Range Min:3s RoHS Compliant: Yes
AM29LV160DB-120FC Time-Delay Relay; Contacts:NO; Time Range:1 sec. to 1024 sec.; Timing Function:Delay-On-Make; Leaded Process Compatible:Yes; Supply Voltage Max:288V; Supply Voltage Min:19V; Time Range Max:1024s; Time Range Min:1s RoHS Compliant: Yes
AM29LV160DB-120EC INTERVAL/SINGLE SHOT TIMER
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AM29LV160BT80SC 制造商:AMD 功能描述:*
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AM29LV160BT-90FC 制造商:Advanced Micro Devices 功能描述: 制造商:Advanced Micro Devices 功能描述:1M X 16 FLASH 3V PROM, 90 ns, PDSO48
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