- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄362269 > AM29LV160BB-90FE x8/x16 Flash EEPROM PDF資料下載
參數(shù)資料
| 型號： | AM29LV160BB-90FE |
| 英文描述： | x8/x16 Flash EEPROM |
| 中文描述： | x8/x16閃存EEPROM |
| 文件頁數(shù)： | 1/35頁 |
| 文件大?。?/td> | 744K |
| 代理商： | AM29LV160BB-90FE |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁
This Data Sheet states AMD’s current specifications regarding the Products described herein. This Data Sheet may
be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
21354
Issue Date:
November 13, 2000
Rev:
D
Amendment/
+1
Am29LV040B
4 Megabit (512 K x 8-Bit)
CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
DISTINCTIVE CHARACTERISTICS
I
Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
I
Manufactured on 0.32 μm process technology
I
High performance
— Full voltage range: access times as fast as 70 ns
— Regulated voltage range: access times as fast as
60 ns
I
Ultra low power consumption (typical values at
5 MHz)
— Automatic sleep mode: 1 μA
— Standby mode: 1 μA
— Read mode: 7 mA
— Program/erase mode: 15 mA
I
Flexible sector architecture
— Eight 64 Kbyte sectors
— Any combination of sectors can be erased;
supports full chip erase
— Sector Protection features:
Hardware method of locking a sector to prevent
any program or erase operations within that sector
Sectors can be locked via programming
equipment
I
Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
I
Embedded Algorithms
— Embedded Erase algorithms automatically
preprogram and erase the entire chip or any
combination of designated sectors
— Embedded Program algorithms automatically
writes and verifies data at specified addresses
I
Minimum 1,000,000 write/erase cycles
guaranteed
I
20-year data retention at 125
°
C
— Reliable operation for the life of the system
I
Package option
— 32-pin PLCC
— 32-pin TSOP
I
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
I
Data# Polling and toggle bits
— Provides a software method of detecting program
or erase cycle completion
I
Erase Suspend/Resume
— Supports reading data from or programming data
to a sector not being erased
相關PDF資料 |
PDF描述 |
|---|---|
| AM29LV160BB-90FI | x8/x16 Flash EEPROM |
| AM29LV160BB-90SC | x8/x16 Flash EEPROM |
| AM29LV160BB-90SE | x8/x16 Flash EEPROM |
| AM29LV160BT-70RFC | x8/x16 Flash EEPROM |
| AM29LV160BT-70RSC | x8/x16 Flash EEPROM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV160BT-120EI | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 90ns 48-Pin TSOP Tray |
| AM29LV160BT80SC | 制造商:AMD 功能描述:* |
| AM29LV160BT-90EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 1M x 16, 48 Pin, Plastic, TSSOP |
| AM29LV160BT-90FC | 制造商:Advanced Micro Devices 功能描述: 制造商:Advanced Micro Devices 功能描述:1M X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| AM29LV160DB120EI | 制造商:Advanced Micro Devices 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。