參數(shù)資料
型號(hào)： AM29LV128ML103PCI
廠商： ADVANCED MICRO DEVICES INC
元件分類： PROM
英文描述： 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
中文描述： 8M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝： 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-64
文件頁(yè)數(shù)： 27/65頁(yè)
文件大小： 1222K
代理商： AM29LV128ML103PCI
September 9, 2003
Am29LV128MH/L
25
D A T A S H E E T
Table 8.
Device Geometry Definition
Addresses (x16)
Data
Description
27h
0018h
Device Size = 2
N
byte
28h
29h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
0005h
0000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
0001h
Number of Erase Block Regions within device (01h = uniform device, 02h = boot
device)
2Dh
2Eh
2Fh
30h
00FFh
0000h
0000h
0001h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
0000h
0000h
0000h
0000h
Erase Block Region 2 Information (refer to CFI publication 100)
35h
36h
37h
38h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
0000h
0000h
0000h
0000h
Erase Block Region 4 Information (refer to CFI publication 100)
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