參數(shù)資料
型號: AM29LV116DB-90FI
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 2M X 8 FLASH 3V PROM, 90 ns, PDSO40
封裝: REVERSE, MO-142CD, TSOP-40
文件頁數(shù): 16/44頁
文件大?。?/td> 863K
代理商: AM29LV116DB-90FI
Am29LV116D
15
Table 5.
CFI Query Identification String
Addresses
Data
Description
10h
11h
12h
51h
52h
59h
Query Unique ASCII string “QRY”
13h
14h
02h
00h
Primary OEM Command Set
15h
16h
40h
00h
Address for Primary Extended Table
17h
18h
00h
00h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
00h
00h
Address for Alternate OEM Extended Table (00h = none exists)
Table 6.
System Interface String
Addresses
Data
Description
1Bh
27h
V
CC
Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
36h
V
CC
Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
00h
V
PP
Min. voltage (00h = no V
PP
pin present)
1Eh
00h
V
PP
Max. voltage (00h = no V
PP
pin present)
Typical timeout per single byte/word write 2
N
μs
1Fh
04h
20h
00h
Typical timeout for Min. size buffer write 2
N
μs (00h = not supported)
21h
0Ah
Typical timeout per individual block erase 2
N
ms
22h
00h
Typical timeout for full chip erase 2
N
ms (00h = not supported)
23h
05h
Max. timeout for byte/word write 2
N
times typical
24h
00h
Max. timeout for buffer write 2
N
times typical
25h
04h
Max. timeout per individual block erase 2
N
times typical
26h
00h
Max. timeout for full chip erase 2
N
times typical (00h = not supported)
相關(guān)PDF資料
PDF描述
AM29LV116DT-120 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV116DT-120EC 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV116DT-120EI 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV116DT-120FC 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV116DT-120FI 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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