參數(shù)資料
型號: AM29LV116DB-90ED
廠商: Advanced Micro Devices, Inc.
英文描述: 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 16兆位(2米× 8位)的CMOS 3.0伏,只引導(dǎo)扇區(qū)閃存
文件頁數(shù): 39/43頁
文件大小: 421K
代理商: AM29LV116DB-90ED
September12,2006 21359E5
Am29LV116D
37
D A T A S H E E T
AC CHARACTERISTICS
t
GHEL
t
WS
OE#
CE#
WE#
RESET#
t
DS
Data
t
AH
Addresses
t
DH
t
CP
DQ7#
D
OUT
t
WC
t
AS
t
CPH
PA
Data# Polling
A0 for program
55 for erase
t
RH
t
WHWH1 or 2
RY/BY#
t
WH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
t
BUSY
Note:
PA = program address, PD = program data, DQ7# = complement of the data written to the device, D
OUT
= data written to
the device. Figure indicates the last two bus cycles of the command sequence.
Figure 22.
Alternate CE# Controlled Write Operation Timings
相關(guān)PDF資料
PDF描述
AM29LV116DB-90EF 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV116DB-70FC 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV116DB-90FC 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV116DB-90FI 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV116DT-120 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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