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參數(shù)資料
| 型號： | AM29LV116DB-70ED |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 16兆位（2米× 8位）的CMOS 3.0伏，只引導扇區(qū)閃存 |
| 文件頁數(shù)： | 3/43頁 |
| 文件大?。?/td> | 421K |
| 代理商： | AM29LV116DB-70ED |
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DATA SHEET
This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
21359
Issue Date:
September 12,2006
Rev:
E
Amendment:
5
Am29LV116D
16 Megabit (2 M x 8-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
Single power supply operation
— 2.7 to 3.6 volt read and write operations for
battery-powered applications
Manufactured on 0.23 μm process technology
— Compatible with and replaces Am29LV116B
device
High performance
— Access times as fast as 70 ns
Ultra low power consumption (typical values at
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 9 mA read current
— 15 mA program/erase current
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
thirty-one 64 Kbyte sectors
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to prevent
any program or erase operations within that sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
n Top or bottom boot block configurations
available
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
Minimum 1,000,000 write cycle guarantee
per sector
20-year data retention at 125
°
C
— Reliable operation for the life of the system
Package option
— 40-pin TSOP
CFI (Common Flash Interface) compliant
— Provides device-specific information to the
system, allowing host software to easily
reconfigure for different Flash devices
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
Data# Polling and toggle bits
— Provides a software method of detecting program
or erase operation completion
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
This product has been retired and is not recommended for designs. For new designs, S29AL016D supersedes Am29LV116D. Please refer to the S29AL016D data sheet for specifications
and ordering information. Availability of this document is retained for reference and historical purposes only.
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| AM29LV116DB-70EF | 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV116DB-90ED | 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV116DB-90EF | 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV116DB-70FC | 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV116DB-90FC | 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV116DB-70EI | 制造商:Spansion 功能描述: |
| AM29LV116DB-90EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV116DT-70EC | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8 70ns 40-Pin TSOP |
| AM29LV116DT-90EI | 制造商:Rochester Electronics LLC 功能描述: 制造商:Advanced Micro Devices 功能描述: |
| AM29LV128MH103REI | 制造商:Spansion 功能描述:NOR Flash Parallel 3.3V 128Mbit 16M/8M x 8bit/16bit 100ns 56-Pin TSOP |
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