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參數(shù)資料
| 型號： | Am29LV116BT-120ECB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 16兆位（2米× 8位）的CMOS 3.0伏，只引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 19/40頁 |
| 文件大?。?/td> | 544K |
| 代理商： | AM29LV116BT-120ECB |
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Am29LV116B
P R E L IM IN A R Y
suspends” all sectors selected for erasure.) Normal
read and write timings and command definitions apply.
Reading at any address within erase-suspended sec-
tors produces status data on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
See “Write Operation Status” for information on these
status bits.
After an erase-suspended program operation is com-
plete, the system can once again read array data within
non-suspended sectors. The system can determine the
status of the program operation using the DQ7 or DQ6
status bits, just as in the standard program operation.
See “Write Operation Status” for more information.
The system may also write the autoselect command
sequence when the device is in the Erase Suspend
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
valid operation. See “Autoselect Command Sequence”
for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase operation. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the de-
vice has resumed erasing.
Notes:
1. See Table 9 for erase command sequence.
2.
See “DQ3: Sector Erase Timer” for more information.
Figure 4.
Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
21359C-7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV116BT-120EE | 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| Am29LV116BT-120EEB | 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV116BT-120EI | 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| Am29LV116BT-120EIB | 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV116BT-120FC | 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV116BT-90EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV116DB-70EI | 制造商:Spansion 功能描述: |
| AM29LV116DB-90EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV116DT-70EC | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8 70ns 40-Pin TSOP |
| AM29LV116DT-90EI | 制造商:Rochester Electronics LLC 功能描述: 制造商:Advanced Micro Devices 功能描述: |
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