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參數(shù)資料
| 型號： | AM29LV033MUU120REI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| 中文描述： | 32兆位（4個M × 8位）的MirrorBit 3.0伏特，只有統(tǒng)一閃存部門與VersatileI / O控制 |
| 文件頁數(shù)： | 49/56頁 |
| 文件大?。?/td> | 1138K |
| 代理商： | AM29LV033MUU120REI |
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November 11, 2002
Am29LV033MU
49
A D V A N C E I N F O R M A T I O N
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information. Write buffer program is typical per word.
3. For 1–32 bytes programmed.
4. Effective write buffer specification is based upon a 32-byte write buffer operation.
Parameter
Speed Options
JEDEC
Std.
Description
90R
101,
101R
112,
112R
120,
120R
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
90
100
110
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
45
ns
t
DVEH
t
DS
Data Setup Time
Min
45
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
45
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation
(Notes 2, 3)
Typ
100
μs
Effective Write Buffer Program Operation,
Per Byte (Notes 2, 4)
Typ
2.95
μs
Accelerated Effective Write Buffer Program
Operation, Per Byte (Notes 2, 4)
Typ
2.4
μs
Single Byte Program (Note 2)
Typ
100
μs
Accelerated Single Byte Programming
Operation (Note 2)
Typ
80
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.4
sec
t
RH
RESET# High Time Before Write (Note 1)
Min
50
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV033MUU120RFI | 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| AM29LV033MUU120RWCI | 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| AM29LV033MUU120WCI | 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| AM29LV033MUU90EI | 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| AM29LV033MUU90FI | 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV040B-120EC\\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 4MBIT 512KX8 120NS 32TSOP - Tape and Reel |
| AM29LV040B-120EC\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 4MBIT 512KX8 120NS 32TSOP - Tape and Reel |
| AM29LV040B-120EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 4M-Bit 512K x 8 120ns 32-Pin TSOP |
| AM29LV040B-120JC | 制造商:Advanced Micro Devices 功能描述: |
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