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參數(shù)資料
| 型號： | AM29LV033MUU112REI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| 中文描述： | 32兆位（4個M × 8位）的MirrorBit 3.0伏特，只有統(tǒng)一閃存部門與VersatileI / O控制 |
| 文件頁數(shù)： | 31/56頁 |
| 文件大?。?/td> | 1138K |
| 代理商： | AM29LV033MUU112REI |
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November 11, 2002
Am29LV033MU
31
A D V A N C E I N F O R M A T I O N
Command Definitions
Table 10.
Command Definitions
Legend:
X = Don’t care
RA = Read Address of the memory location to be read.
RD = Read Data read from location RA during read operation.
PA = Program Address. Addresses latch on the falling edge of the WE#
or CE# pulse, whichever happens later.
PD = Program Data for location PA. Data latches on the rising edge of
WE# or CE# pulse, whichever happens first.
SA = Sector Address of sector to be verified (in autoselect mode) or
erased. Address bits A21–A16 uniquely select any sector.
WBL = Write Buffer Location. Address must be within the same write
buffer page as PA.
WC = Byte Count. Number of write buffer locations to load minus 1.
Notes:
1.
2.
3.
See Table 1 for description of bus operations.
All values are in hexadecimal.
Except for the read cycle and the fourth cycle of the autoselect
command sequence, all bus cycles are write cycles.
During unlock and command cycles, when lower address bits are
don’t cares, address bits A21–A12 are also don’t cares.
No unlock or command cycles required when device is in read
mode.
The Reset command is required to return to the read mode (or to
the erase-suspend-read mode if previously in Erase Suspend)
when the device is in the autoselect mode, or if DQ5 goes high
(while the device is providing status information).
The fourth cycle of the autoselect command sequence is a read
cycle. See the
Autoselect Command Sequence
section for more
information.
The device ID must be read in three cycles.
4.
5.
6.
7.
8.
9.
10. The data is 00h for an unprotected sector group and 01h for a
protected sector group.
11. Command sequence resets device for next command after
aborted write-to-buffer operation.
12. The Unlock Bypass command is required prior to the Unlock
Bypass Program command.
13. The Unlock Bypass Reset command is required to return to the
read mode when the device is in the unlock bypass mode.
14. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation.
15. The Erase Resume command is valid only during the Erase
Suspend mode.
The data is 88h for factory locked and 08h for not factory locked.
16. Command is valid when device is ready to read array data or when
device is in autoselect mode.
Command Sequence (Notes)
Read (Note 5)
Reset (Note 6)
Manufacturer ID
Device ID (Note 8)
SecSi
Sector Factory Protect
(Note 9)
C
Bus Cycles (Notes 1–4)
Third
Addr
Data
First
Second
Addr
Fourth
Fifth
Sixth
Addr
RA
XXX
XXX
XXX
Data
RD
F0
AA
AA
Data
Addr
Data
Addr
Data
Addr
Data
1
1
4
6
A
Enter SecSi Sector Region
Exit SecSi Sector Region
Program
Write to Buffer
Program Buffer to Flash
Write to Buffer Abort Reset (Note 11)
Unlock Bypass
Unlock Bypass Program (Note 12)
Unlock Bypass Reset (Note 13)
Chip Erase
Sector Erase
Program/Erase Suspend (Note 14)
Program/Erase Resume (Note 15)
CFI Query (Note 16)
XXX
XXX
55
55
XXX
XXX
90
90
X00
X01
01
7E
X0E
1C
X0F
00
4
XXX
AA
XXX
55
XXX
90
X03
(Note 9)
Sector Group Protect Verify
(Note 10)
4
XXX
AA
XXX
55
XXX
90
(SA)X02
00/01
3
4
4
6
1
3
3
2
2
6
6
1
1
1
XXX
XXX
XXX
XXX
SA
XXX
XXX
XXX
XXX
XXX
XXX
BA
BA
55
AA
AA
AA
AA
29
AA
AA
A0
90
AA
AA
B0
30
98
XXX
XXX
XXX
XXX
55
55
55
55
XXX
XXX
XXX
SA
88
90
A0
25
XXX
PA
SA
00
PD
WC
PA
PD
WBL
PD
XXX
XXX
PA
XXX
XXX
XXX
55
55
PD
00
55
55
XXX
XXX
F0
20
XXX
XXX
80
80
XXX
XXX
AA
AA
XXX
XXX
55
55
XXX
SA
10
30
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