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參數(shù)資料
| 型號： | AM29LV033MUU101EI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| 中文描述： | 32兆位（4個M × 8位）的MirrorBit 3.0伏特，只有統(tǒng)一閃存部門與VersatileI / O控制 |
| 文件頁數(shù)： | 21/56頁 |
| 文件大?。?/td> | 1138K |
| 代理商： | AM29LV033MUU101EI |
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November 11, 2002
Am29LV033MU
21
A D V A N C E I N F O R M A T I O N
Table 6.
CFI Query Identification String
Table 7.
System Interface String
Addresses
Data
Description
10h
11h
12h
51h
52h
59h
Query Unique ASCII string “QRY”
13h
14h
02h
00h
Primary OEM Command Set
15h
16h
40h
00h
Address for Primary Extended Table
17h
18h
00h
00h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
00h
00h
Address for Alternate OEM Extended Table (00h = none exists)
Addresses
Data
Description
1Bh
27h
V
CC
Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
36h
V
CC
Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
00h
V
PP
Min. voltage (00h = no V
PP
pin present)
1Eh
00h
V
PP
Max. voltage (00h = no V
PP
pin present)
1Fh
07h
Typical timeout per single byte write 2
N
μs
20h
07h
Typical timeout for Min. size buffer write 2
N
μ
s (00h = not supported)
21h
0Ah
Typical timeout per individual block erase 2
N
ms
22h
00h
Typical timeout for full chip erase 2
N
ms (00h = not supported)
23h
01h
Max. timeout for byte write 2
N
times typical
24h
05h
Max. timeout for buffer write 2
N
times typical
25h
04h
Max. timeout per individual block erase 2
N
times typical
26h
00h
Max. timeout for full chip erase 2
N
times typical (00h = not supported)
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