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參數(shù)資料
| 型號(hào)： | AM29LV033C-90FI |
| 廠(chǎng)商： | ADVANCED MICRO DEVICES INC |
| 元件分類(lèi)： | PROM |
| 英文描述： | LM3622 Lithium-Ion Battery Charger Controller; Package: SOIC NARROW; No of Pins: 8 |
| 中文描述： | 4M X 8 FLASH 3V PROM, 90 ns, PDSO40 |
| 封裝： | REVERSE, MO-142CD, TSOP-40 |
| 文件頁(yè)數(shù)： | 18/48頁(yè) |
| 文件大?。?/td> | 1023K |
| 代理商： | AM29LV033C-90FI |
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Am29LV033C
17
Table 6.
System Interface String
Addresses
Data
Description
1Bh
27h
V
CC
Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
36h
V
CC
Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
00h
V
PP
Min. voltage (00h = no V
PP
pin present)
1Eh
00h
V
PP
Max. voltage (00h = no V
PP
pin present)
1Fh
04h
Typical timeout per single byte/word write 2
N
μs
20h
00h
Typical timeout for Min. size buffer write 2
N
μs (00h = not supported)
21h
0Ah
Typical timeout per individual block erase 2
N
ms
22h
00h
Typical timeout for full chip erase 2
N
ms (00h = not supported)
23h
05h
Max. timeout for byte/word write 2
N
times typical
24h
00h
Max. timeout for buffer write 2
N
times typical
25h
04h
Max. timeout per individual block erase 2
N
times typical
26h
00h
Max. timeout for full chip erase 2
N
times typical (00h = not supported)
Table 7.
Device Geometry Definition
Addresses
Data
Description
27h
16h
Device Size = 2
N
byte
28h
29h
00h
00h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
00h
00h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
01h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
3Fh
00h
00h
01h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
00h
00h
00h
00h
Erase Block Region 2 Information
35h
36h
37h
38h
00h
00h
00h
00h
Erase Block Region 3 Information
39h
3Ah
3Bh
3Ch
00h
00h
00h
00h
Erase Block Region 4 Information
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV033C-70WDI | 32 Megabit (4 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
| AM29LV033C-90WDE | 32 Megabit (4 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
| AM29LV033MU | LM3622 Lithium-Ion Battery Charger Controller; Package: SOIC NARROW; No of Pins: 8; Qty per Container: 2500; Container: Reel |
| AM29LV033MUU101WCI | 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| AM29LV033MUU101EI | 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV033C-90WDI-T | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Advanced Micro Devices 功能描述: 制造商:AMD 功能描述: |
| AM29LV040B-120EC\\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 4MBIT 512KX8 120NS 32TSOP - Tape and Reel |
| AM29LV040B-120EC\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 4MBIT 512KX8 120NS 32TSOP - Tape and Reel |
| AM29LV040B-120EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 4M-Bit 512K x 8 120ns 32-Pin TSOP |
| AM29LV040B-120JC | 制造商:Advanced Micro Devices 功能描述: |
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