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參數(shù)資料
| 型號(hào)： | AM29LV033C-90EE |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | LM3622 Lithium-Ion Battery Charger Controller; Package: SOIC NARROW; No of Pins: 8; Qty per Container: 95; Container: Rail |
| 中文描述： | 4M X 8 FLASH 3V PROM, 90 ns, PDSO40 |
| 封裝： | MO-142CD, TSOP-40 |
| 文件頁數(shù)： | 20/48頁 |
| 文件大小： | 1023K |
| 代理商： | AM29LV033C-90EE |
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Am29LV033C
19
COMMAND DEFINITIONS
Writing specific address and data commands or se-
quences into the command register initiates device op-
erations. Table 9 defines the valid register command
sequences. Writing
incorrect
address and data val-
ues
or writing them in the
improper sequence
resets
the device to reading array data.
All addresses are latched on the falling edge of WE#
or CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the appropriate timing diagrams in the
“AC Characteristics” section.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array
data after completing an Embedded Program or Em-
bedded Erase algorithm.
After the device accepts an Erase Suspend command,
the device enters the Erase Suspend mode. The sys-
tem can read array data using the standard read tim-
ings, except that if it reads at an address within
erase-suspended sectors, the device outputs status
data. After completing a programming operation in the
Erase Suspend mode, the system may once again
read array data with the same exception. See “Erase
Suspend/Erase Resume Commands” for more infor-
mation on this mode.
The system
must
issue the reset command to re-en-
able the device for reading array data if DQ5 goes
high, or while in the autoselect mode. See the “Reset
Command” section, next.
See also “Requirements for Reading Array Data” in
the “Device Bus Operations” section for more informa-
tion. The Read Operations table provides the read pa-
rameters, and Figure 13 shows the timing diagram.
Reset Command
Writing the reset command to the device resets the
device to reading array data. Address bits are don’t
care for this command.
The reset command may be written between the se-
quence cycles in an erase command sequence before
erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ig-
nores reset commands until the operation is complete.
The reset command may be written between the se-
quence cycles in a program command sequence be-
fore programming begins. This resets the device to
reading array data (also applies to programming in
Erase Suspend mode). Once programming begins,
however, the device ignores reset commands until the
operation is complete.
The reset command may be written between the se-
quence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must
be written to return to reading array data (also
applies to autoselect during Erase Suspend).
If DQ5 goes high during a program or erase operation,
writing the reset command returns the device to read-
ing array data (also applies during Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and devices
codes, and determine whether or not a sector is pro-
tected. Table 9 shows the address and data require-
ments. This method is an alternative to that shown in
Table 3, which is intended for PROM programmers
and requires V
ID
on address bit A9.
The autoselect command sequence is initiated by writ-
ing two unlock cycles, followed by the autoselect com-
mand. The device then enters the autoselect mode,
and the system may read at any address any number
of times, without initiating another command se-
quence. A read cycle at address XX00h retrieves the
manufacturer code. A read cycle at address XX01h re-
turns the device code. A read cycle containing a sector
address (SA) and the address 02h returns 01h if that
sector is protected, or 00h if it is unprotected. Refer to
Table for valid sector addresses.
The system must write the reset command to exit the
autoselect mode and return to reading array data.
Byte Program Command Sequence
The device programs one byte of data for each pro-
gram operation. The command sequence requires four
bus cycles, and is initiated by writing two unlock write
cycles, followed by the program set-up command. The
program address and data are written next, which in
turn initiate the Embedded Program algorithm. The
system is
not
required to provide further controls or
timings. The device automatically generates the pro-
gram pulses and verifies the programmed cell margin.
Table 9 shows the address and data requirements for
the byte program command sequence.
When the Embedded Program algorithm is complete,
the device then returns to reading array data and ad-
dresses are no longer latched. The system can deter-
mine the status of the program operation by using
DQ7, DQ6, or RY/BY#. See “Write Operation Status”
for information on these status bits.
Any commands written to the device during the Em-
bedded Program Algorithm are ignored. Note that a
hardware reset
immediately terminates the program-
ming operation. The Byte Program command se-
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV033C-90FE | LM3622 Lithium-Ion Battery Charger Controller; Package: SOIC NARROW; No of Pins: 8; Qty per Container: 2500; Container: Reel |
| AM29LV033C-90FI | LM3622 Lithium-Ion Battery Charger Controller; Package: SOIC NARROW; No of Pins: 8 |
| AM29LV033C-70WDI | 32 Megabit (4 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
| AM29LV033C-90WDE | 32 Megabit (4 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
| AM29LV033MU | LM3622 Lithium-Ion Battery Charger Controller; Package: SOIC NARROW; No of Pins: 8; Qty per Container: 2500; Container: Reel |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV033C-90EF | 制造商:Advanced Micro Devices 功能描述:4M X 8 FLASH 3V PROM, 90 ns, PDSO40 |
| AM29LV033C-90WDI-T | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Advanced Micro Devices 功能描述: 制造商:AMD 功能描述: |
| AM29LV040B-120EC\\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 4MBIT 512KX8 120NS 32TSOP - Tape and Reel |
| AM29LV040B-120EC\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 4MBIT 512KX8 120NS 32TSOP - Tape and Reel |
| AM29LV040B-120EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 4M-Bit 512K x 8 120ns 32-Pin TSOP |
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