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參數(shù)資料
| 型號： | AM29LV033C-70FI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 32 Megabit (4 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
| 中文描述： | 4M X 8 FLASH 3V PROM, 70 ns, PDSO40 |
| 封裝： | REVERSE, MO-142CD, TSOP-40 |
| 文件頁數(shù)： | 43/48頁 |
| 文件大小： | 1023K |
| 代理商： | AM29LV033C-70FI |
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42
Am29LV033C
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0 V V
CC,
1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2.
Under worst case conditions of 90°C, V
CC
= 2.7 V 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four- or two-bus-cycle sequence for the program command. See Table 9
for further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V one pin at a time.
TSOP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.7
15
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
45
s
Byte Programming Time
9
300
μs
Excludes system level
overhead (Note 5)
Accelerated Byte Program Time
7
210
μs
Chip Programming Time (Note 3)
36
108
s
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°
C
10
Years
125
°
C
20
Years
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV033C-70WDE | 32 Megabit (4 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
| AM29LV033C-90WDI | 32 Megabit (4 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
| AM29LV033C-90 | LM3622 Lithium-Ion Battery Charger Controller; Package: SOIC NARROW; No of Pins: 8; Qty per Container: 95; Container: Rail |
| AM29LV033C-90EE | LM3622 Lithium-Ion Battery Charger Controller; Package: SOIC NARROW; No of Pins: 8; Qty per Container: 95; Container: Rail |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV033C-90EF | 制造商:Advanced Micro Devices 功能描述:4M X 8 FLASH 3V PROM, 90 ns, PDSO40 |
| AM29LV033C-90WDI-T | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Advanced Micro Devices 功能描述: 制造商:AMD 功能描述: |
| AM29LV040B-120EC\\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 4MBIT 512KX8 120NS 32TSOP - Tape and Reel |
| AM29LV040B-120EC\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 4MBIT 512KX8 120NS 32TSOP - Tape and Reel |
| AM29LV040B-120EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 4M-Bit 512K x 8 120ns 32-Pin TSOP |
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