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參數(shù)資料
| 型號(hào)： | AM29LV033C-120FK |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (4 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
| 中文描述： | 32兆位（4個(gè)M × 8位）的CMOS 3.0伏特，只有統(tǒng)一部門閃存 |
| 文件頁數(shù)： | 26/49頁 |
| 文件大?。?/td> | 693K |
| 代理商： | AM29LV033C-120FK |
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24
Am29LV033C
22268B5 September 12, 2006
D A T A S H E E T
WRITE OPERATION STATUS
The device provides several bits to determine the sta-
tus of a write operation: DQ2, DQ3, DQ5, DQ6, DQ7,
and RY/BY#.
Table 10, on page 29
and the following
subsections describe the functions of these bits. DQ7,
RY/BY#, and DQ6 each offer a method for determining
whether a program or erase operation is complete or
in progress. These three bits are discussed first.
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host sys-
tem whether an Embedded Algorithm is in progress or
completed, or whether the device is in Erase Suspend.
Data# Polling is valid after the rising edge of the final
WE# pulse in the program or erase command se-
quence.
During the Embedded Program algorithm, the device
outputs on DQ7 the complement of the datum pro-
grammed to DQ7. This DQ7 status also applies to pro-
gramming during Erase Suspend. When the
Embedded Program algorithm is complete, the device
outputs the datum programmed to DQ7. The system
must provide the program address to read valid status
information on DQ7. If a program address falls within a
protected sector, Data# Polling on DQ7 is active for
approximately 1 μs, then the device returns to reading
array data.
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase
algorithm is complete, or if the device enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
This is analogous to the complement/true datum out-
put described for the Embedded Program algorithm:
the erase function changes all the bits in a sector to
“1”; prior to this, the device outputs the “complement,”
or “0.” The system must provide an address within any
of the sectors selected for erasure to read valid status
information on DQ7.
After an erase command sequence is written, if all
sectors selected for erasing are protected, Data# Poll-
ing on DQ7 is active for approximately 100 μs, then the
device returns to reading array data. If not all selected
sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the se-
lected sectors that are protected.
When the system detects DQ7 has changed from the
complement to true data, it can read valid data at
DQ7–DQ0 on the
following
read cycles. This is be-
cause DQ7 may change asynchronously with
DQ0–DQ6 while Output Enable (OE#) is asserted low.
Figure 18, on page 39
, Data# Polling Timings (During
Embedded Algorithms), in the “AC Characteristics”
section illustrates this.
Table 10, on page 29
shows the outputs for Data#
Polling on DQ7.
Figure 5
shows the Data# Polling al-
gorithm.
DQ7 = Data
Yes
No
No
DQ5 = 1
No
Yes
Yes
FAIL
PASS
Read DQ7–DQ0
Addr = VA
Read DQ7–DQ0
Addr = VA
DQ7 = Data
START
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is an address within
any sector selected for erasure. During chip erase, a
valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
Figure 5.
Data# Polling Algorithm
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| AM29LV033C-120WDF | 32 Megabit (4 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
| AM29LV033C-120WDK | 32 Megabit (4 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
| AM29LV033C-70EF | 32 Megabit (4 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
| AM29LV033C-70FF | 32 Megabit (4 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
| AM29LV033C-70WDF | 32 Megabit (4 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV033C-70EI | 制造商:Advanced Micro Devices 功能描述: 制造商:Advanced Micro Devices 功能描述:NOR Flash, 4M x 8, 40 Pin, Plastic, TSSOP |
| AM29LV033C-90EF | 制造商:Advanced Micro Devices 功能描述:4M X 8 FLASH 3V PROM, 90 ns, PDSO40 |
| AM29LV033C-90WDI-T | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Advanced Micro Devices 功能描述: 制造商:AMD 功能描述: |
| AM29LV040B-120EC\\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 4MBIT 512KX8 120NS 32TSOP - Tape and Reel |
| AM29LV040B-120EC\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 4MBIT 512KX8 120NS 32TSOP - Tape and Reel |
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