參數(shù)資料
型號: AM29LV033C-120EF
廠商: Advanced Micro Devices, Inc.
英文描述: 32 Megabit (4 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
中文描述: 32兆位(4個M × 8位)的CMOS 3.0伏特,只有統(tǒng)一部門閃存
文件頁數(shù): 24/49頁
文件大?。?/td> 693K
代理商: AM29LV033C-120EF
22
Am29LV033C
22268B5 September 12, 2006
D A T A S H E E T
After an erase-suspended program operation is com-
plete, the system can once again read array data
within non-suspended sectors. The system deter-
mines the status of the program operation using the
DQ7 or DQ6 status bits, just as in the standard pro-
gram operation. See
“Write Operation Status” on
page 26
for more information.
The system may also write the autoselect command
sequence when the device is in the Erase Suspend
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
valid operation. See
“Autoselect Command Sequence”
on page 21
for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase sus-
pend mode and continue the sector erase operation.
Further writes of the Resume command are ignored.
Another Erase Suspend command can be written after
the device has resumed erasing.
Notes:
1. See
Table 9, on page 25
for erase command sequence.
2. See
“DQ3: Sector Erase Timer” on page 28
for more
information.
Figure 4.
Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
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AM29LV033C-120EK 32 Megabit (4 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
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