參數(shù)資料
型號(hào)： AM29LV017D-120EC
英文描述： MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On-Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Continuous Drain Current - 100 Deg C:66A; Continuous Drain Current - 25 Deg C:93A RoHS Compliant: Yes
中文描述： x8閃存EEPROM的
文件頁(yè)數(shù)： 23/35頁(yè)
文件大小： 744K
代理商： AM29LV017D-120EC
Am29LV040B
23
TEST CONDITIONS
Table 6.
Test Specifications
KEY TO SWITCHING WAVEFORMS
2.7 k
C
L
6.2 k
3.3 V
Device
Under
Test
Figure 9.
Test Setup
Note:
Diodes are IN3064 or equivalent
Test Condition
-60R,
-70
-90,
-120
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
100
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0–3.0
V
Input timing measurement
reference levels
1.5
V
Output timing measurement
reference levels
1.5
V
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
3.0 V
0.0 V
1.5 V
1.5 V
Output
Measurement Level
Input
Figure 10.
Input Waveforms and Measurement Levels
相關(guān)PDF資料
PDF描述
AM29LV017D-120EI 20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
AM29LV017D-120FC 20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
AM29LV017D-120FI 20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
AM29LV017D-120WCC 20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
AM29LV017D-120WCI MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:No; Package/Case:DPAK; Peak Reflow Compatible (260 C):No RoHS Compliant: No
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV017D-120EI 制造商:Advanced Micro Devices 功能描述:
AM29LV017D-70EC 制造商:Advanced Micro Devices 功能描述:
am29lv017d-70wcc 制造商:Advanced Micro Devices 功能描述:
AM29LV017D-90EC 制造商:ADV-MICRO-DEV 功能描述:
AM29LV017D-90WCC 制造商:Advanced Micro Devices 功能描述:2M X 8 FLASH 3V PROM, 90 ns, PBGA48
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