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參數(shù)資料
| 型號： | Am29LV010BB-70JCB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | LM3420-4.2, -8.2, -8.4, -12.6, -16.8 Lithium-Ion Battery Charge Controller; Package: SOT-23; No of Pins: 5; Qty per Container: 1000; Container: Reel |
| 中文描述： | 1兆位（128畝× 8位）的CMOS 3.0伏特，只有統(tǒng)一部門閃存 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 66K |
| 代理商： | AM29LV010BB-70JCB |
Am29LV010B
2
A D V A N C E I N F O R M A T IO N
GENERAL DESCRIPTION
The Am29LV010B is a 1 Mbit, 3.0 Volt-only Flash
memory device organized as 131,072 bytes. The
Am29LV010B has a uniform sector architecture.
The device is offered in 32-pin PLCC and 32-pin TSOP
packages. The byte-wide (x8) data appears on DQ7–
DQ0. All read, erase, and program operations are
accomplished using only a single power supply. The
device can also be programmed in standard EPROM
programmers.
The standard Am29LV010B offers access times of 45,
55, 70, and 120 ns (90 and 100 ns parts are also avail-
able), allowing high speed microprocessors to operate
without wait states. To eliminate bus contention, the
device has separate chip enable (CE#), write enable
(WE#) and output enable (OE#) controls.
The device requires only a
single power supply
(2.7
V–3.6V) for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard
. Com-
mands are written to the command register using
standard microprocessor write timings. Register con-
tents serve as input to an internal state-machine that
controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed
for the programming and erase operations. Reading
data out of the device is similar to reading from other
Flash or EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the
Embedded
Program
algorithm—an internal algorithm that auto-
matically times the program pulse widths and verifies
proper cell margin. The
Unlock Bypass
mode facili-
tates faster programming times by requiring only two
write cycles to program data instead of four.
Device erasure occurs by executing the erase com-
mand sequence. This initiates the
Embedded Erase
algorithm—an internal algorithm that automatically
preprograms the array (if it is not already programmed)
before executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by reading the DQ7 (Data#
Polling) and DQ6 (toggle)
status bits
. After a program
or erase cycle has been completed, the device is ready
to read array data or accept another command.
The
sector erase architecture
allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection
measures include a low
V
CC
detector that automatically inhibits write opera-
tions during power transitions. The
hardware sector
protection
feature disables both program and erase
operations in any combination of the sectors of mem-
ory. This can be achieved in-system or via program-
ming equipment.
The
Erase Suspend
feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The device offers two power-saving features. When ad-
dresses have been stable for a specified amount of
time, the device enters the
automatic sleep mode
.
The system can also place the device into the
standby
mode
. Power consumption is greatly reduced in both
these modes.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effective-
ness. The device electrically erases all bits within a
sector simultaneously via Fowler-Nordheim tun-
neling. The data is programmed using hot electron
injection.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Am29LV010BB-70JE | LM3420-4.2, -8.2, -8.4, -12.6, -16.8 Lithium-Ion Battery Charge Controller; Package: SOT-23; No of Pins: 5; Qty per Container: 1000; Container: Reel |
| Am29LV010BB-70JEB | LM3420-4.2, -8.2, -8.4, -12.6, -16.8 Lithium-Ion Battery Charge Controller; Package: SOT-23; No of Pins: 5; Qty per Container: 1000; Container: Reel |
| Am29LV010BB-70JI | LM3420-4.2, -8.2, -8.4, -12.6, -16.8 Lithium-Ion Battery Charge Controller; Package: SOT-23; No of Pins: 5; Qty per Container: 1000; Container: Reel |
| Am29LV010BB-70JIB | LM3420-4.2, -8.2, -8.4, -12.6, -16.8 Lithium-Ion Battery Charge Controller; Package: SOT-23; No of Pins: 5; Qty per Container: 3000; Container: Reel |
| Am29LV010BT-45RJC | LM3420-4.2, -8.2, -8.4, -12.6, -16.8 Lithium-Ion Battery Charge Controller; Package: SOT-23; No of Pins: 5; Qty per Container: 3000; Container: Reel |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV017B-120EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 2M x 8, 40 Pin, Plastic, TSSOP |
| AM29LV017D120EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV017D-120EC | 制造商:SCRAFT 功能描述: 制造商:SPANSION, INC. 功能描述: |
| AM29LV017D-120EI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV017D-70EC | 制造商:Advanced Micro Devices 功能描述: |
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