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參數(shù)資料
| 型號(hào)： | Am29LV008BT-70RFE |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 8兆位（1米× 8位）的CMOS 3.0伏，只引導(dǎo)扇區(qū)閃存 |
| 文件頁(yè)數(shù)： | 22/38頁(yè) |
| 文件大小： | 492K |
| 代理商： | AM29LV008BT-70RFE |
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22
Am29LV008B
P R E L I M I N A R Y
DC CHARACTERISTICS
CMOS Compatible
Notes:
1. The I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
. Typical V
CC
is 3.0 V
2. I
CC
active while Embedded Erase or Embedded Program is in progress.
3. Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC
+ 30 ns.
4. Not 100% tested.
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC
max
±
1.0
μA
I
LIT
A9 Input Load Current
V
CC
= V
CC max
; A9 = 12.5 V
35
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
,
V
CC
= V
CC max
±
1.0
μA
I
CC1
V
CC
Active Read Current
(Note 1)
CE# = V
IL,
OE#
=
V
IH
5 MHz
7
12
mA
1 MHz
2
4
I
CC2
V
CC
Active Write Current
(Notes 2 and 4)
CE# = V
IL,
OE#
=
V
IH
15
30
mA
I
CC3
V
CC
Standby Current
V
CC
= V
CC max
;
CE#, RESET# = V
CC
±
0.3 V
0.2
5
μA
I
CC4
V
CC
Standby Current During Reset
V
CC
= V
CC max
;
RESET# = V
SS
±
0.3 V
0.2
5
μA
I
CC5
Automatic Sleep Mode (Note 3)
V
IH
= V
CC
±
0.3 V;
V
IL
= V
SS
±
0.3 V
0.2
5
μA
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
0.7 x V
CC
V
CC
+ 0.3
V
V
ID
Voltage for Autoselect and
Temporary Sector Unprotect
V
CC
= 3.3 V
11.5
12.5
V
V
OL
Output Low Voltage
I
OL
= 4.0 mA, V
CC
= V
CC min
0.45
V
V
OH1
Output High Voltage
I
OH
= –2.0 mA, V
CC
= V
CC min
0.85 V
CC
V
V
OH2
I
OH
= –100 μA, V
CC
= V
CC min
V
CC
–0.4
V
LKO
Low V
CC
Lock-Out Voltage (Note 4)
2.3
2.5
V
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