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參數(shù)資料
| 型號(hào)： | AM29LV008BT-120EI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 1M X 8 FLASH 3V PROM, 120 ns, PDSO40 |
| 封裝： | MO-142CD, TSOP-40 |
| 文件頁數(shù)： | 38/38頁 |
| 文件大?。?/td> | 492K |
| 代理商： | AM29LV008BT-120EI |
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38
Am29LV008B
P R E L I M I N A R Y
REVISION SUMMARY FOR AM29LV008B
Revision B
Distinctive Characteristics
Changed typical read and program/erase current spec-
ifications.
Device now has a guaranteed minimum endurance of
1,000,000 write cycles.
Figure 1, In-System Sector Protect/Unprotect
Algorithm
Corrected A6 to 0, Changed wait specification to 150
μs on sector protect and 15 ms on sector unprotect.
DC Characteristics
Changed typical read and program/erase current spec-
ifications.
AC Characteristics
Alternate CE# Controlled Erase/Program Operations:
Changed t
CP
to 35 ns for 70R, 80, and 90 speed
options.
Erase and Programming Performance
Device now has a guaranteed minimum endurance of
1,000,000 write cycles.
Revision B+1
Figure 1, In-System Sector Protect/Unprotect
Algorithms
In the sector protect algorithm, added a “Reset
PLSCNT=1” box in the path from “Protect another sec-
tor” back to setting up the next sector address.
DC Characteristics
Changed Note 1 to indicate that OE# is at V
IH
for the
listed current.
AC Characteristics:
Erase/Program Operations; Alternate CE# Controlled
Erase/Program Operations:
Corrected the notes refer-
ence for t
WHWH1
and t
WHWH2
. These parameters are
100% tested. Corrected the note reference for t
VCS
.
This parameter is not 100% tested.
Temporary Sector Unprotect Table
Added note reference for t
VIDR
. This parameter is not
100% tested.
Figure 21, Sector Protect/Unprotect Timing
Diagram
A valid address is not required for the first write cycle;
only the data 60h.
Erase and Programming Performance
In Note 2, the worst case endurance is now 1 million cy-
cles.
Trademarks
Copyright 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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| Am29LV008BT-120EIB | 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
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| Am29LV008BT-120FCB | 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
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| Am29LV008BT-120FEB | 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
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