參數(shù)資料
型號(hào): AM29LV008BB90EC
英文描述: Reference design kit featuring 14-pin synchronous PWM controller for DDR memory application with the voltage tracking capability
中文描述: x8閃存EEPROM的
文件頁數(shù): 4/35頁
文件大?。?/td> 744K
代理商: AM29LV008BB90EC
4
Am29LV040B
PRODUCT SELECTOR GUIDE
Note:
See “AC Characteristics” for full specifications.
BLOCK DIAGRAM
Family Part Number
Am29LV040B
Speed Options
Regulated Voltage Range: V
CC
=3.0–3.6 V
-60R
Full Voltage Range: V
CC
= 2.7–3.6 V
-70
-90
-120
Max access time, ns (t
ACC
)
60
70
90
120
Max CE# access time, ns (t
CE
)
60
70
90
120
Max OE# access time, ns (t
OE
)
30
30
30
35
Input/Output
Buffers
X-Decoder
Y-Decoder
Chip Enable
Output Enable
Logic
Erase Voltage
Generator
PGM Voltage
Generator
Timer
V
CC
Detector
State
Control
Command
Register
V
CC
V
SS
WE#
CE#
OE#
STB
STB
DQ0
DQ7
Sector Switches
Data
Latch
Y-Gating
Cell Matrix
A
A0–A18
相關(guān)PDF資料
PDF描述
AM29LV008BB90EE x8 Flash EEPROM
AM29LV008BB90EI x8 Flash EEPROM
AM29LV008BB90FC MOSFET; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:84A; On Resistance, Rds(on):12mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes; Package/Case:D2PAK; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
AM29LV008BB90FE 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
AM29LV008BB90FI 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
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