參數(shù)資料
型號(hào)： Am29LV008BB-80ECB
廠商： Advanced Micro Devices, Inc.
英文描述： 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述： 8兆位（1米× 8位）的CMOS 3.0伏，只引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù)： 38/38頁(yè)
文件大?。?/td> 492K
代理商： AM29LV008BB-80ECB
38
Am29LV008B
P R E L I M I N A R Y
REVISION SUMMARY FOR AM29LV008B
Revision B
Distinctive Characteristics
Changed typical read and program/erase current spec-
ifications.
Device now has a guaranteed minimum endurance of
1,000,000 write cycles.
Figure 1, In-System Sector Protect/Unprotect
Algorithm
Corrected A6 to 0, Changed wait specification to 150
μs on sector protect and 15 ms on sector unprotect.
DC Characteristics
Changed typical read and program/erase current spec-
ifications.
AC Characteristics
Alternate CE# Controlled Erase/Program Operations:
Changed t
CP
to 35 ns for 70R, 80, and 90 speed
options.
Erase and Programming Performance
Device now has a guaranteed minimum endurance of
1,000,000 write cycles.
Revision B+1
Figure 1, In-System Sector Protect/Unprotect
Algorithms
In the sector protect algorithm, added a “Reset
PLSCNT=1” box in the path from “Protect another sec-
tor” back to setting up the next sector address.
DC Characteristics
Changed Note 1 to indicate that OE# is at V
IH
for the
listed current.
AC Characteristics:
Erase/Program Operations; Alternate CE# Controlled
Erase/Program Operations:
Corrected the notes refer-
ence for t
WHWH1
and t
WHWH2
. These parameters are
100% tested. Corrected the note reference for t
VCS
.
This parameter is not 100% tested.
Temporary Sector Unprotect Table
Added note reference for t
VIDR
. This parameter is not
100% tested.
Figure 21, Sector Protect/Unprotect Timing
Diagram
A valid address is not required for the first write cycle;
only the data 60h.
Erase and Programming Performance
In Note 2, the worst case endurance is now 1 million cy-
cles.
Trademarks
Copyright 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相關(guān)PDF資料
PDF描述
AM29LV008BB-80EE 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV008BB-80EEB 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV008BB-80EI 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV008BB-80EIB 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV008BT-120EC 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV008BB-90ED 制造商:Spansion 功能描述:Flash Memory IC
AM29LV008BT-120EC 制造商:ADV-MICRO-DEV 功能描述:
AM29LV008BT-80EC 制造商:Spansion 功能描述:IC 8 MEG X 8, 3 V FLASH TOP B - Bulk
AM29LV008DT-90EC 制造商:Spansion 功能描述:8M (1MX8) 3V, BOOT BLOCK, TOP, TSOP40, COM - Trays
AM29LV010B-45JC 制造商:Spansion 功能描述:1M (128KX8) 3V, UNIFORM SECTOR, PLCC32, COM - Rail/Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*