參數(shù)資料
型號： AM29LV001BT-55EC
廠商： ADVANCED MICRO DEVICES INC
元件分類： PROM
英文描述： RP12 (A) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 5V; 2:1 Wide Input Voltage Range; 12 Watts Output Power; 1.6kVDC Isolation; UL Certified; Over Current Protection; Five-Sided Shield; Standard DIP24 and SMD-Pinning; Efficiency to 88%
中文描述： 128K X 8 FLASH 3V PROM, 55 ns, PDSO32
封裝： MO-142B, TSOP-32
文件頁數(shù)： 35/38頁
文件大小： 453K
代理商： AM29LV001BT-55EC
35
Am29LV001B
P R E L IM IN A R Y
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0 V V
CC
, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2.
Under worst case conditions of 90°C, V
CC
= 2.7 V (3.0 V for -45R), 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 5 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V one pin at a time.
TSOP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
PLCC PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.7
15
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
7
s
Byte Programming Time
9
300
μs
Excludes system level
overhead (Note 5)
Chip Programming Time (Note 3)
1.1
3.3
s
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
13.0 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
4
6
pF
C
OUT
Output Capacitance
V
OUT
= 0
8
12
pF
C
IN2
Control Pin Capacitance
V
PP
= 0
8
12
pF
相關(guān)PDF資料
PDF描述
AM29LV001BT-70EC 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV001BB-55FCB 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV001BB-55FE Quadruple Bus Buffer Gates With 3-State Outputs 14-TVSOP -40 to 85
AM29LV001BB-55FI Quadruple Bus Buffer Gates With 3-State Outputs 14-TVSOP -40 to 85
AM29LV001BB-45REC 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV001BT-55ED 制造商:Spansion 功能描述:1M (128KX8) 3V, BOOT BLOCK, TOP, TSOP32, COM - Trays
AM29LV002BB-90EC 制造商:Advanced Micro Devices 功能描述:
AM29LV002BT-90EF 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 2Mbit 256K x 8bit 90ns 40-Pin TSOP
AM29LV002BT-90EI\\T 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 2MBIT 256KX8 90NS 40TSOP - Tape and Reel
AM29LV002BT-90EI\T 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 2MBIT 256KX8 90NS 40TSOP - Tape and Reel
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*