參數(shù)資料
型號： AM29LV001B
廠商： Advanced Micro Devices, Inc.
英文描述： 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述： 1兆位（128畝× 8位）的CMOS 3.0伏，只引導(dǎo)扇區(qū)閃存
文件頁數(shù)： 19/38頁
文件大?。?/td> 453K
代理商： AM29LV001B
19
Am29LV001B
P R E L IM IN A R Y
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under
these conditions DQ5 produces a “1.” This is a failure
condition that indicates the program or erase cycle was
not successfully completed.
The DQ5 failure condition may appear if the system
tries to program a “1” to a location that is previously pro-
grammed to “0.”
Only an erase operation can change
a “0” back to a “1.”
Under this condition, the device
halts the operation, and when the operation has ex-
ceeded the timing limits, DQ5 produces a “1.”
Under both these conditions, the system must issue the
reset command to return the device to reading array
data.
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not an
erase operation has begun. (The sector erase timer
does not apply to the chip erase command.) If additional
sectors are selected for erasure, the entire time-out also
applies after each additional sector erase command.
When the time-out is complete, DQ3 switches from “0” to
“1.” If the time between additional sector erase com-
mands from the system can be assumed to be less than
50 μs, the system need not monitor DQ3. See also the
“Sector Erase Command Sequence” section.
After the sector erase command sequence is written,
the system should read the status on DQ7 (Data# Poll-
ing) or DQ6 (Toggle Bit I) to ensure the device has ac-
cepted the command sequence, and then read DQ3. If
DQ3 is “1”, the internally controlled erase cycle has be-
gun; all further commands (other than Erase Suspend)
are ignored until the erase operation is complete. If
DQ3 is “0”, the device will accept additional sector
erase commands. To ensure the command has been
accepted, the system software should check the status
of DQ3 prior to and following each subsequent sector
erase command. If DQ3 is high on the second status
check, the last command might not have been ac-
cepted. Table 6 shows the outputs for DQ3.
START
No
Yes
Yes
DQ5 = 1
No
Yes
Toggle Bit
= Toggle
No
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Read DQ7–DQ0
Toggle Bit
= Toggle
Read DQ7–DQ0
Twice
Read DQ7–DQ0
Notes:
1. Read toggle bit twice to determine whether or not it is
toggling. See text.
2. Recheck toggle bit because it may stop toggling as DQ5
changes to “1”. See text.
21557C-9
Figure 6.
Toggle Bit Algorithm
(Note 1)
(Notes
1, 2)
相關(guān)PDF資料
PDF描述
AM29LV001BT-5EK 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV001BB-45REF 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV001BB-45RJD 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV001BB-45RJF 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV001BB-5EC 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV001BB-45REIT 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 1MBIT 128KX8 45NS 32TSOP - Tape and Reel
AM29LV001BB-55JC 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 1M-Bit 128K x 8 55ns 32-Pin PLCC
AM29LV001BB-70ED 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 1MBIT 128KX8 70NS 32TSOP - Trays
AM29LV001BB-90JD 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 1MBIT 128KX8 90NS 32PLCC - Rail/Tube
AM29LV001BT-55ED 制造商:Spansion 功能描述:1M (128KX8) 3V, BOOT BLOCK, TOP, TSOP32, COM - Trays
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