參數(shù)資料
型號(hào)： AM29LS18PC
英文描述： 500V Fast Recovery Diode in a DO-203AB (DO-5) package
中文描述： 四D型觸發(fā)器
文件頁(yè)數(shù)： 10/35頁(yè)
文件大小： 744K
代理商： AM29LS18PC
10
Am29LV040B
Table 3.
Am29LV040B Autoselect Codes (High Voltage Method)
L = Logic Low = V
IL
, H = Logic High = V
IH
, SA = Sector Address, X = Don’t care.
Sector Protection/Unprotection
The hardware sector protection feature disables both
program and erase operations in any sector. The hard-
ware sector unprotection feature re-enables both
program and erase operations in previously protected
sectors.
Sector protection/unprotection method intended only
for programming equipment requires V
ID
on address
pin A9 and OE#. This method is compatible with pro-
grammer routines written for earlier 3.0 volt-only AMD
flash devices. Publication number 22168 contains
further details; contact an AMD representative to
request a copy.
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at its factory prior to shipping the device
through AMD’s ExpressFlash Service. Contact an
AMD representative for details.
It is possible to determine whether a sector is protected
or unprotected. See “Autoselect Mode” for details.
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to Table 4 for
command definitions). In addition, the following hard-
ware data protection measures prevent accidental
erasure or programming, which might otherwise be
caused by spurious system level signals during V
CC
power-up and power-down transitions, or from system
noise.
Low V
CC
Write Inhibit
When V
CC
is less than V
LKO
, the device does not
accept any write cycles. This protects data during V
CC
power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
device resets. Subsequent writes are ignored until V
CC
is greater than V
LKO
. The system must provide the
proper signals to the control pins to prevent uninten-
tional writes when V
CC
is greater than V
LKO
.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
V
IL
, CE# = V
IH
or WE# = V
IH
. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
If WE# = CE# = V
IL
and OE# = V
IH
during power up, the
device does not accept commands on the rising edge
of WE#. The internal state machine is automatically
reset to reading array data on power-up.
Description
CE#
OE#
WE#
A18
to
A16
A15
to
A10
A9
A8
to
A7
A6
A5
to
A2
A1
A0
DQ7
to
DQ0
Manufacturer ID
:
AMD
L
L
H
X
X
V
ID
X
L
X
L
L
01h
Device ID: Am29LV040B
L
L
H
X
X
V
ID
X
L
X
L
H
4Fh
Sector Protection Verification
L
L
H
SA
X
V
ID
X
L
X
H
L
01h
(protected)
00h
(unprotected)
相關(guān)PDF資料
PDF描述
AM29LS18PCB 400V 25A Std. Recovery Diode in a DO-203AA (DO-4)package
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